X-On Electronics has gained recognition as a prominent supplier of 2N3764 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3764 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3764 Microchip

2N3764 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N3764
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor
Datasheet: 2N3764 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 25.5171 ea
Line Total: USD 2551.71

Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 100
Multiples : 100
100 : USD 23.736
500 : USD 23.7015
5000 : USD 22.793

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3764 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3764 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices Qualified Level JAN 2N3762 2N3763 2N3764 2N3765 JANTX 2N3762L 2N3763L JANTXV MAXIMUM RATINGS 2N3762* 2N3763* Ratings Symbol Unit 2N3764 2N3765 - Emitter Voltage 40 60 V CEO - 40 60 V - 39* (TO - Emitter - 5.0 V EBO 2N3762, 2N3763 1.5 I C 1 2 2N3762* 2N3764 2N3763* 2N3765 0 Total Power Dissipation T = +25 C 1.0 0.5 W A P T 0 Operating & Storage Jun - 55 to +200 C T T op , - 5* THERMAL CHARACTERISTICS Symbol Max. Unit Characteristics 2N3762* 2N3764 2N3763* 2N3765 0 Thermal Resistance Junction - - Case 60 88 R - 46* (TO - *Electrical characteristics for L suffix devices are identical 0 0 1) Derate linearly at 5.71 mW/ > +25 2N3764, 2N3765 A 0 0 2) Derate linearly at 2.86 mW/ > +25 A 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Breakdown Current 40 I 2N3762, 2N3764 V C CEO 60 2N3763, 2N3765 - Base Cutoff Current 100 V = 20 Vdc 2N3762, 2N3764 100 V = 30 Vdc 2N3763, 2N3765 I 10 V = 40 Vdc 2N3762, 2N3764 10 V = 60 Vdc 2N3763, 2N3765 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (9 78) 689 - 0803 1 of 2 Page CB CB Adc CBO CB Adc CB Collector (BR) = 10 mAdc Vdc Collector ckage outline pa *See appendix A for C C for T C C for T to the non L corresponding devices 206AB) TO JC C/W to 2N3762L, 2N3763L TO stg ction Temp. Range Adc Collector Current Vdc Base Voltage 205AD) TO CBO Vdc Base Voltage Collector Vdc or Collect 2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit - Emitter Cutoff Current 100 V = 2.0 Vdc, V = 20 Vdc 2N3762, 2N3764 I EB C E CEX 100 V = 2.0 Vdc, V = 30 Vdc 2N3763, 2N3765 EB CE Emitter - Base Cutoff Current 200 V = 2.0 Vdc EB I EBO 10 V = 5.0 Vdc 2N3762, 2N3764 EB 10 2N3763, 2N3765 ON CHARACTERISTICS (3) ard - Current Transfer Ratio I = 1.0 Vdc C CE 35 I = 1.0 Vdc C CE 40 I = 1.0 Vdc 40 140 C CE h FE 30 120 I = 1.0 Adc, V = 1.5 Vdc 2N3762, 2N3764 C CE 20 80 2N3763, 2N3765 30 I = 1.5 Adc, V = 5.0 Vdc 2N3762, 2N3764 C CE 20 2N3763, 2N37 65 - Emitter Saturation Voltage I C B 0.1 V I CE(sat) C B 0.22 I 0.5 C B I 0.9 C B Bas e - Emitter Saturation Voltage I C B 0.8 V I BE(sat) C B 1.0 I C B 1.2 0.9 1.4 I C B DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio , Magnitude 1.8 6.0 I = 10 Vdc, f = 100 MHz 2N3762, 2N3764 h C CE 1.5 6.0 2N3763, 2N3765 Output Capacitance C 25 obo V = 0, 100 kHz 1.0 MHz E C 80 ibo V = 0, 100 kHz 1.0 EB C SWITCHING CHARACTERISTICS t 8.0 s V = 30 Vdc, V = 0, d EB t Rise Time 35 I r s C B1 t 80 s V = 30 Vdc, V = 0, s EB t Fall Time 35 I f s C B1 (3) Pulse Te st: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 100 mAdc = 1.0 mAdc, I CC Storage Time = 100 mAdc = 1.0 mAdc, I CC Delay Time MHz f = 0.5 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF fe = 50 mAdc, V = 100 mAdc = 1.0 Adc, I = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 m Adc, I = 1.0 mAdc = 10 mAdc, I = 100 mAdc = 1.0 Adc, I = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 m Adc, I = 1.0 mAdc = 10 mAdc, I Collector = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V Forw Adc Adc All Types Adc Collector

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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