X-On Electronics has gained recognition as a prominent supplier of 2N3866 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3866 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3866 Microchip

2N3866 electronic component of Microchip
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Part No.2N3866
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 400 mA 1 W Through Hole TO-39 (TO-205AD)
Datasheet: 2N3866 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.503 ea
Line Total: USD 8.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 8.503
10 : USD 6.5572
100 : USD 4.7125
500 : USD 4.4444
1000 : USD 3.9812

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 9
Multiples : 1
9 : USD 8.2368

   
Manufacturer
Product Category
Transistor Polarity
Collector Current Dc Max
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain Min
Operating Temperature Classification
Category
Rad Hardened
Collector Current Dc
Dc Current Gain
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We are delighted to provide the 2N3866 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3866 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION: HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 55 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 3.5 V EBO Continuous Collector Current I 0.4 A C Continuous Base Current I 2.0 A B Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=28V 20 A CEO CE I V =55V, V=1.5V 0.1 mA CEV CE BE(OFF) I V =30V, V =1.5V, T=200C 5.0 mA CEV CE BE(OFF) C I V=3.5V 0.1 mA EBO EB BV I =5.0mA, R=10 55 V CER C BE BV I=500A 55 V CBO C BV I=5.0mA 30 V CEO C BV I=100A 3.5 V EBO E V I =100mA, I=20mA 1.0 V CE(SAT) C B h V =5.0V, I =50mA (2N3866) 10 200 FE CE C h V =5.0V, I =50mA (2N3866A) 25 200 FE CE C h V =5.0V, I=360mA 5.0 FE CE C f V =15V, I =50mA, f=200MHz (2N3866) 500 MHz T CE C f V =15V, I =50mA, f=200MHz (2N3866A) 800 MHz T CE C C V =28V, I =0, f=1.0MHz 3.0 pF ob CB E G V =28V, P =1.0W, f=400MHz (Figure 1) 10 dB PE CC out V =28V, P =1.0W, f=400MHz (Figure 1) 45 % CC out R2 (15-September 2010)2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400MHz Test Circuit TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (15-September 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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