TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3867S JAN 2N3868 2N3868S JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol 2N3867 2N3868 Unit Collector-Base Voltage V 40 60 Vdc CBO Collector-Emitter Voltage V 40 60 Vdc CEO Emitter-Base Voltage V 4.0 Vdc EBO Collector Current I 3.0 mAdc C (1) Total Power Dissipation T = +25C P 1.0 W/C A T Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg THERMAL CHARACTERISTICS TO-5 * 2N3867, 2N3868 Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient R 175 C/mW JA Note: * Electrical characteristics for S suffix devices are identical to the non S corresponding devices. 1/ Derate linearly 5.71mW/C for T > +25C A 2/ Derate linearly 57.1mW/C for T > +25C C ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867, S V 40 Vdc (BR)CEO I = 10 Adc C 2N3868, S 60 TO-39 * (TP-205AD) Collector-Base Cutoff Current 2N3867S, 2N3868S V = 40Vdc 2N3867, S I 100 Adc CB CBO V = 60Vdc 2N3868, S CB Emitter-Base Cutoff Current I 100 Adc EBO V = 4.0Vdc EB Collector-Emitter Cutoff Current V = 40Vdc 2N3867, S 1.0 CE V = 60Vdc 2N3868, S I 1.0 Adc CE CEX V = 40Vdc, T = +150C 2N3867, S 50 CE A V = 60Vdc, T = +150C 2N3868, S 50 CE A T4-LDS-0170 Rev. 1 (101121) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) (CONT.) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERTICS Forward-Current Transfer Ratio I = 500mAdc, V = 1.0Vdc 2N3867, S 50 C CE 2N3868, S 35 I = 1.5Adc, V = 2.0Vdc 2N3867, S 40 200 C CE 2N3868, S 30 150 I = 2.5Adc, V = 3.0Vdc 2N3867, S 25 C CE h FE 2N3868, S 20 I = 3.0Adc, V = 5.0Vdc 2N3867, S 20 C CE 2N3868, S 20 I = 500mAdc, V = 1.0Vdc, T = -55C 2N3867, S 25 C CE A 2N3868, S 17 Collector-Emitter Saturation Voltage I = 500mAdc, I = 50mAdc 0.5 C B V Vdc I = 1.5Adc, I = 150mAdc CE(sat) 0.75 C B I = 2.5Adc, I = 250mAdc 1.5 C B Base-Emitter Saturation Voltage 1.0 I = 500mA, I = 50mAdc C B 2N3867, S 0.9 1.4 V Vdc BE(sat) I = 1.5A, I = 150mAdc C B 2N3868, S 0.85 1.4 I = 2.5A, I = 250mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio h 3 12 k fe I = 100mAdc, V = 5.0Vdc, f = 20MHz C CE Output Capacitance V = 10Vdc, I = 0, 100 kHz f 1.0MHz C 120 pF obo CB E Iutput Capacitance C pF V = 3.0Vdc, I = 0, 100 kHz f 1.0MHz ibo 800 EB C (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% T4-LDS-0170 Rev. 1 (101121) Page 2 of 4