X-On Electronics has gained recognition as a prominent supplier of 2N3879 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3879 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3879 Microchip

2N3879 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N3879
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Power BJT
Datasheet: 2N3879 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 24.5525 ea
Line Total: USD 24.55 
Availability - 253
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
253
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 24.5525
10 : USD 24.541
100 : USD 24.518
250 : USD 24.5065
500 : USD 24.2535
1000 : USD 24.1385
5000 : USD 24.081
10000 : USD 24.0465

   
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We are delighted to provide the 2N3879 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3879 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices Qualified Level JANTX 2N3879 JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit - Emitter Voltage 75 V CEO - 120 V Emitter - 7.0 V EBO Base Current I 5.0 B I 7.0 C 0 Total Power Dissipation T = 25 35 W C P T 0 - 65 to +200 C T T J , THERMAL CHARACTERISTICS TO - 66* Characteristics Symbol Max. Unit (TO - 0 Thermal Resistance, Junction - - Case 5.0 R 0 0 1) Derate linearly 200 mW/ > 25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 75 CEO I C - Emitter Cutoff Current I 5.0 CEO V = 50 Vdc CE - Emitter Cutoff Current 4.0 I CEX V = 100 Vdc, V = 1.5 Vdc CE BE - Bas I 25 V = 120 Vdc Emitter - I 10 EBO V = 7.0 Vdc EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page mAdc Base Cutoff Current CB CBO mAdc e Cutoff Current Collector mAdc Collector Vdc Collector = 200 mAdc (BR) Vdc Emitter Breakdown Voltage Collector Package Outline *See Appendix A for C for T JC C/W to 213AA) stg Operating & Storage Junction Temperature Range C (1) Adc Collector Current Adc Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc Collector 2N3879 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (2) ON CHARACTERISTICS - Current Transfer Ratio I = 5.0 Vdc 40 C CE h FE I = 5.0 Vdc 20 80 C CE 12 100 I = 2.0 C CE - Emitter Saturation Voltage V 1.2 CE(sat) I C B Base - Emitter Saturation Voltage V 2.0 BE(sat) I C B Base - Emitter Voltage 1.8 V BE(on) I = 4.0 Adc, V = 2.0 Vdc C CE DYNAMIC CHARACTERISTICS - Signal Short - Circuit Forward Current Transfer Ratio 4.0 20 h I = 10 Vdc, f = 10 MHz C CE Output Capacitance 175 C obo V = 0, 0.1 MHz 1.0 MHz E SWITCHING CHARACTERISTICS Turn - t 0.44 s V C Turn - t 1.2 s V = - I C B SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t = 1.0 s C Test 1 V CE C Test 2 V CE C Test 3 V CE C Test 4 V CE C (2) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 115 8 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 100 mAdc = 75 Vdc, I = 500 mAdc = 40 Vdc, I = 1.25 Adc = 28 Vdc, I = 7.0 Adc = 5.0 Vdc, I B CC = 0.4 Adc = 4.0 Adc I = 30 Vdc I off Off Time B CC = 0.4 Adc = 4.0 Adc I = 30 Vdc I on On Time CB f = 10 Vdc, I pF = 500 mAdc, V fe Magnitude of Common Emitter Small Vdc = 0.4 Adc = 4.0 Adc, I Vdc = 0.4 Adc = 4.0 Adc, I Vdc Collector Vdc = 4.0 Adc, V = 4.0 Adc, V = 0.5 Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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