TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C 2N4150 2N5237 2N5238 Parameters / Test Conditions Symbol Unit 2N4150S 2N5237S 2N5238S Collector-Emitter Voltage V 70 120 170 Vdc CEO Collector-Base Voltage V 100 150 200 Vdc CBO Emitter-Base Voltage V 10 Vdc EBO Collector Current I 10 Adc C (1) Total Power Dissipation T = +25C 1.0 A P W (2) T T = +25C 15 C Operating & Storage Junction Temperature Range T , T -65 to +200 C j stg TO-5 Thermal Resistance, Junction-to Case R 10 JC C/W 2N4150, 2N5237, 2N5238 Junction- to Ambient 175 R JA 1) Derate linearly 5.7mW/C for T > +25C A 2) Derate linearly 100mW/C for T > +25C C ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 70 I = 0.1mAdc 2N4150, 2N4150S C V 120 Vdc 2N5237, 2N5237S (BR)CEO 170 2N5238, 2N5238S Collector-Emitter Cutoff Current 10 V = 0.5Vdc, V = 60Vdc 2N4150, 2N4150S BE CE 10 I Adc V = 0.5Vdc, V = 110Vdc 2N5237, 2N5237S CEX BE CE 10 V = 0.5Vdc, V = 160Vdc 2N5238, 2N5238S BE CE TO-39 (TO-205AD) Collector-Emitter Cutoff Current 2N4150S, 2N5237S, 2N5238S V = 60Vdc 2N4150, 2N4150S 10 CE I Adc CEO V = 110Vdc 2N5237, 2N5237S 10 CE V = 160Vdc 2N5238, 2N5238S 10 CE Emitter-Base Cutoff Current 10 V = 7.0Vdc I Adc EB EBO 0.1 V = 5.0Vdc EB T4-LDS-0014 Rev. 4 (082192) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) (CONT.) A Parameters / Test Conditions Symbol Min. Max. Unit Collector-Base Cutoff Current 10 V = 100Vdc 2N4150, 2N4150S CB I 10 Adc V = 150Vdc 2N5237, 2N5237S CBO CB 10 V = 200Vdc 2N5238, 2N5238S CB 0.1 V = 80Vdc All Types CB (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 1.0Adc, V = 5.0Vdc 2N4150, 2N4150S 50 200 C CE 2N5237, 2N5237S 50 225 h FE 2N5238, 2N5238S 50 225 I = 5.0Adc, V = 5.0Vdc All Types 40 120 C CE I = 10Adc, V = 5.0Vdc All Types 10 - C CE Collector-Emitter Saturation Voltage I = 5.0Adc, I = 0.5Adc V 0.6 Vdc C B CE(sat) I = 10Adc, I = 1.0Adc 2.5 C B Base-Emitter Saturation Voltage I = 5.0Adc, I = 0.5Adc V 1.5 Vdc C B BE(sat) I = 10Adc, I = 1.0Adc 25 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio h 1.5 7.5 fe I = 0.2Adc, V = 10Vdc, f = 10MHz C CE Forward Current Transfer Ratio 40 160 I = 50mAdc, V = 5.0V, f = 1.0kHz 2N4150, 2N4150S C CE h fe 2N5237, 2N5237S 40 160 40 250 2N5238, 2N5238S Output Capacitance C 350 obo pF V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Delay Time V = 20Vdc, V = 5.0Vdc t 50 ns d CC BB I = 5.0Adc, I = 0.5Adc ns Rise Time C B1 t 500 r s Storage Time t 1.5 V = 20Vdc, V = 5.0Vdc s CC BB I = 5.0Adc, I = -I = -0.5Adc ns Fall Time C B1 B2 t 500 f SAFE OPERATING AREA DC Tests T = +25C, 1 Cycle, t = 1.0s C Test 1 V = 40Vdc, I = 0.22Adc CE C Test 2 V = 70Vdc, I = 90mAdc CE C Test 3 V = 120Vdc, I = 15mAdc 2N5237, 2N5237S CE C V = 170Vdc, I = 3.5mAdc 2N5238, 2N5238S CE C (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0014 Rev. 4 (082192) Page 2 of 2