TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
DEVICES LEVELS
JAN
2N4150 2N5237 2N5238
JANTX
2N4150S 2N5237S 2N5238S
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted)
C
2N4150 2N5237 2N5238
Parameters / Test Conditions Symbol Unit
2N4150S 2N5237S 2N5238S
Collector-Emitter Voltage V 70 120 170 Vdc
CEO
Collector-Base Voltage V 100 150 200 Vdc
CBO
Emitter-Base Voltage V 10 Vdc
EBO
Collector Current I 10 Adc
C
(1)
Total Power Dissipation @ T = +25C 1.0
A
P W
(2)
T
@ T = +25C 15
C
Operating & Storage Junction Temperature Range T , T -65 to +200 C
j stg
TO-5
Thermal Resistance, Junction-to Case R 10
JC
C/W
2N4150, 2N5237, 2N5238
Junction- to Ambient 175
R
JA
1) Derate linearly @ 5.7mW/C for T > +25C
A
2) Derate linearly @ 100mW/C for T > +25C
C
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
70
I = 0.1mAdc 2N4150, 2N4150S
C
V 120 Vdc
2N5237, 2N5237S (BR)CEO
170
2N5238, 2N5238S
Collector-Emitter Cutoff Current
10
V = 0.5Vdc, V = 60Vdc 2N4150, 2N4150S
BE CE
10
I Adc
V = 0.5Vdc, V = 110Vdc 2N5237, 2N5237S CEX
BE CE
10
V = 0.5Vdc, V = 160Vdc 2N5238, 2N5238S
BE CE
TO-39
(TO-205AD)
Collector-Emitter Cutoff Current
2N4150S, 2N5237S, 2N5238S
V = 60Vdc 2N4150, 2N4150S 10
CE
I Adc
CEO
V = 110Vdc 2N5237, 2N5237S 10
CE
V = 160Vdc 2N5238, 2N5238S 10
CE
Emitter-Base Cutoff Current
10
V = 7.0Vdc I Adc
EB EBO
0.1
V = 5.0Vdc
EB
T4-LDS-0014 Rev. 4 (082192) Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) (CONT.)
A
Parameters / Test Conditions Symbol Min. Max. Unit
Collector-Base Cutoff Current
10
V = 100Vdc 2N4150, 2N4150S
CB
I 10 Adc
V = 150Vdc 2N5237, 2N5237S CBO
CB
10
V = 200Vdc 2N5238, 2N5238S
CB
0.1
V = 80Vdc All Types
CB
(3)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I = 1.0Adc, V = 5.0Vdc 2N4150, 2N4150S 50 200
C CE
2N5237, 2N5237S 50 225
h
FE
2N5238, 2N5238S 50 225
I = 5.0Adc, V = 5.0Vdc All Types 40 120
C CE
I = 10Adc, V = 5.0Vdc All Types 10 -
C CE
Collector-Emitter Saturation Voltage
I = 5.0Adc, I = 0.5Adc V 0.6 Vdc
C B CE(sat)
I = 10Adc, I = 1.0Adc 2.5
C B
Base-Emitter Saturation Voltage
I = 5.0Adc, I = 0.5Adc V 1.5 Vdc
C B BE(sat)
I = 10Adc, I = 1.0Adc 25
C B
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
|h| 1.5 7.5
fe
I = 0.2Adc, V = 10Vdc, f = 10MHz
C CE
Forward Current Transfer Ratio
40 160
I = 50mAdc, V = 5.0V, f = 1.0kHz 2N4150, 2N4150S
C CE
h
fe
2N5237, 2N5237S 40 160
40 250
2N5238, 2N5238S
Output Capacitance
C 350
obo
pF
V = 10Vdc, I = 0, 100kHz f 1.0MHz
CB E
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time V = 20Vdc, V = 5.0Vdc t 50 ns
d
CC BB
I = 5.0Adc, I = 0.5Adc ns
Rise Time C B1 t 500
r
s
Storage Time t 1.5
V = 20Vdc, V = 5.0Vdc s
CC BB
I = 5.0Adc, I = -I = -0.5Adc ns
Fall Time C B1 B2 t 500
f
SAFE OPERATING AREA
DC Tests
T = +25C, 1 Cycle, t = 1.0s
C
Test 1
V = 40Vdc, I = 0.22Adc
CE C
Test 2
V = 70Vdc, I = 90mAdc
CE C
Test 3
V = 120Vdc, I = 15mAdc 2N5237, 2N5237S
CE C
V = 170Vdc, I = 3.5mAdc 2N5238, 2N5238S
CE C
(3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%
T4-LDS-0014 Rev. 4 (082192) Page 2 of 2