TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N5010 500 Vdc 2N5011 600 Vdc 2N5012 700 Vdc V CER 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc TO-5 Collector-Base Voltage 2N5010 500 Vdc 2N5010 thru 2N5015 2N5011 600 Vdc 2N5012 700 Vdc V CBO 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc Emitter-Base Voltage V 5 Vdc EBO Collector Current I 200 mAdc C Base Current I 20 mAdc B Total Power Dissipation TO-39 T = +25C P 1.0 W A t 2N5010S thru 2N5015S T = +25 C 7.0 C Thermal Resistance, Junction to Case 1/ R 20 C/W JC Operating & Storage Junction Temperature Range T , T -65 to +200 C j stg Note: 1/ See 19500/727 for Thermal Derating Curves. T4-LDS-0067 Rev. 2 (100293) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit Collector to Base Cutoff Current V = 400V 2N5010 10 nAdc CB V = 500V 2N5011 10 nAdc CB V = 580V 2N5012 10 nAdc CB I CBO1 V = 650V 2N5013 10 nAdc CB V = 700V 2N5014 10 nAdc CB V = 760V 2N5015 10 nAdc CB T = +150C A V = 400V 2N5010 10 uAdc CB V = 500V 2N5011 10 uAdc CB V = 588V 2N5012 I 10 uAdc CB CBO2 V = 650V 2N5013 10 uAdc CB V = 700V 2N5014 10 uAdc CB V = 760V 2N5015 10 uAdc CB Emitter to Base Cutoff Current V = 4V 20 uAdc EB I EBO Collector to Base Breakdown Voltage I = 0.1mAdc 2N5010 500 Vdc C I = 0.1mAdc 2N5011 600 Vdc C I = 0.1mAdc 2N5012 700 Vdc C V (BR)CBO I = 0.2mAdc 2N5013 800 Vdc C I = 0.2mAdc 2N5014 900 Vdc C I = 0.2mAdc 2N5015 1000 Vdc C Emitter to Base Breakdown Voltage V I = 0mA (BR)EBO 5 Vdc C I = 0.05mA E Collector to Emitter Breakdown Voltage R = 1K 2N5010 500 Vdc BE 2N5011 600 Vdc I = 0.2mA, Pulsed C 2N5012 V 700 Vdc (BR)CER 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 1000 Vdc Forward-Current Transfer Ratio I = 25mA 2N5010, 2N5011, 2N5012 30 180 C h FE1 I = 20mA 2N5013, 2N5014, 2N5015 30 180 C V = 10V CE V = 10V CE h 10 FE2 I = 5mA C V = 10V CE T = -55C h 10 A FE3 I = 20mA C T4-LDS-0067 Rev. 2 (100293) Page 2 of 4