TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C 2N5660 2N5661 Parameters / Test Conditions Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage V 200 300 Vdc CEO Collector-Base Voltage V 250 400 Vdc CBO Collector-Emitter Voltage V 250 400 Vdc CER Emitter-Base Voltage V 6 Vdc EBO TO-66 Base Current I 0.5 Adc B 2N5660, 2N5661 Collector Current I 2.0 Adc C Operating & Storage Junction Temperature T , T -65 to +200 C j stg Range 2N5660 2N5662 2N5661 2N5663 (1) (1) (2) Total Power Dissipation T = +25C 2.0 1.0 A P W (3) (4) T T = +100C 20 15 C Thermal Resistance, Junction-to-Case R 5.0 6.7 JC C/W Thermal Resistance, Junction-to-Ambient 87.5 175 R JA Thermal Resistance, Junction-to-Case 2N5660U3 R 4.5 C/W JC 2N5661U3 4.0 TO-5 Note: 2N5662, 2N5663 1. Derate linearly 11.4mW/C for T > +25C A 2. Derate linearly 5.7mW/C for T > +25C A 3. Derate linearly 200mW/C for T > +100C C 4. Derate linearly 150mW/C for T > +100C C ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage U3 V I = 10mAdc 2N5660, U3, 2N5662 (BR)CEO 200 C Vdc 2N5660U3, 2N5661U3 2N5661, U3, 2N5663 300 Collector-Base Breakdown Voltage I = 10mAdc, R = 100 2N5660, U3, 2N5662 V 250 (BR)CER C BE Vdc 2N5661, U3, 2N5663 400 T4-LDS-0184 Rev. 1 (101686) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Emitter-Base Breakdown Voltage V 6.0 Vdc (BR)EBO I = 10Adc E Collector-Emitter Cutoff Current V = 200Vdc 2N5660, U3, 2N5662 I 0.2 Adc CE CES V = 300Vdc 2N5661, U3, 2N5663 0.2 CE Collector-Base Cutoff Current V = 200Vdc 2N5660, U3, 2N5662 0.1 Adc CB V = 250Vdc 2N5660, U3, 2N5662 I 1.0 mAdc CB CBO V = 300Vdc 2N5661, U3, 2N5663 0.1 Adc CB V = 400Vdc 2N5661, U3, 2N5663 1.0 mAdc CB (5) ON CHARACTERISTICS Forward-Current Transfer Ratio 2N5660, U3, 2N5662 40 I = 50mAdc, V = 2.0Vdc C CE 2N5661, U3, 2N5663 25 2N5660, U3, 2N5662 40 120 I =0.5Adc, V = 5.0Vdc C CE h 2N5661, U3, 2N5663 FE 25 75 I = 1.0Adc, V = 5.0Vdc All types 15 C CE I = 2.0Adc, V = 5.0Vdc All types 5.0 C CE Collector-Emitter Saturation Voltage I = 1.0Adc, I = 0.1Adc 0.4 C B V Vdc CE(sat) I = 2.0Adc, I = 0.4Adc 0.8 C B Base-Emitter Saturation Voltage I = 1.0Adc, I = 0.1Adc V 1.2 Vdc C B BE(sat) I = 2.0Adc, I = 0.4Adc 1.5 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter SmallSignal Short-Circuit Forward Current Transfer Ratio h fe I = 0.1Adc, V = 5.0Vdc, f = 10MHz 2.0 7.0 C CE Output Capacitance C 45 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t V = 100Vdc I = 0.5Adc I = 15mAdc 2N5660, U3, 2N5662 0.25 CC C B1 on s V = 100Vdc I = 0.5Adc I = 25mAdc 2N5661, U3, 2N5663 0.25 CC C B1 Turn-Off Time t V = 100Vdc I = 0.5Adc I = -I = 15mAdc 2N5660, U3, 2N5662 CC C B1 B2 off s 0.85 V = 100Vdc I = 0.5Adc I = -I = 25mAdc 2N5661, U3, 2N5663 CC C B1 B2 1.2 T4-LDS-0184 Rev. 1 (101686) Page 2 of 6