X-On Electronics has gained recognition as a prominent supplier of 2N6678 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6678 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6678 Microchip

2N6678 electronic component of Microchip
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See Product Specifications
Part No.2N6678
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Power BJT
Datasheet: 2N6678 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 137.28 ea
Line Total: USD 137.28 
Availability - 18
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 137.28
500 : USD 137.06
5000 : USD 131.791

   
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We are delighted to provide the 2N6678 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6678 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 - Emitter Voltage 300 400 V C EO - 450 650 V - 450 650 V CEX Emitter - V 8.0 EBO 2N6676, 2N6678 Base Current I 5.0 B TO-3 (TO-204AA)* 15 I C 2N6676 2N6691 2N6678 2N6693 0 6.0 3.0 W Total Power Dissipation T = 25 C A P 0 T 175 175 W T = 25 C C 0 - 65 to +200 C T T op THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 1.0 R 2N6691, 2N6693 0 0 1) Derate linearly 1.0 > 25 C C 0 0 TO-61* 2) Derate linearly 34.2 mW/ > 25 C A 0 0 3) Derate linearly 17.1 mW/ > 25 C A 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 300 I 2N6676, 2N6691 V C CEO 400 2N6678, 2N6693 - Emitter Cutoff Current 0.1 V = 450 Vdc, V = 1.5 Vdc 2N6676, I CE BE CEX 0.1 V = 650 Vdc, V = 1.5 Vdc 2N6678, 2N6693 CE BE 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page 2N6691 mAdc Collector (BR) = 200 mAdc Vdc Emitter Breakdown Voltage Collector Outline * See Appendix A for Package C for T C for T C for T W/ JC C/W to stg Operating & Storage Junction Temperature Range (1) (3) (2) Adc Collector Current Adc Vdc Base Voltage Vdc Base Voltage Collector CBO Vdc Base Voltage Collector Vdc Collector 2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit Emitter - I EBO 2.0 V = 8.0 Vdc EB - 1.0 V = 450 Vdc 2N6676, 2N6691 I 1.0 V = 650 Vdc 2N6678, 2N6693 (4) ON CHARACTERISTICS - Current Transfer Ratio 15 40 I = 3.0 Vdc h C CE FE 8.0 20 I = 3.0 Vdc C CE - Emitter Saturation Voltage V 1.0 CE(sat) I C B Base - Emitter Saturation Voltage 1.5 V BE(sat) I C B DYNAMIC CHARACTERISTICS Small - Signal Short - Circuit Forward Current Transfer Ratio 3.0 10 h I = 10 Vdc, f = 5 MHz C CE Output Capacitance C 150 500 obo V = 0, 100 kHz 1.0 MHz E SWITCHING CHARACTERISTICS t 0.1 d s t Rise Time 0.6 s r t - - 19500/538 2.5 s s t Fall Time 0.5 s f t - 0.5 c s SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t = 1.0 s C Test 1 V CE C Test 2 V 2N6676, 2N6678 CE C Test 3 V CE C Test 4 V 2N6691, 2N6693 CE C Test 5 V 2N6676, 2N6691 CE C V 2N6678, 2N6693 CE C Clamped Switching 0 T = 25 C V = 15 Vdc A I 2N6676, 2N6691 C I 2N6678, 2N6693 C (4) Pul se Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 15 Adc Clamped Voltage = 450 Vdc = 15 Adc Clamped Voltage = 350 Vdc CC = 10 mAdc = 400 Vdc, I = 20 mAdc = 300 Vdc, I = 7.0 Adc = 25 Vdc, I All Types = 0.25 Adc = 100 Vdc, I = 5.9 Adc = 30 Vdc, I All Types = 15 Adc = 11.7 Vdc, I Over Time Cross PRF See Figure 3 of MIL Storage Time Delay Time CB f = 10 Vdc I pF = 1.0 Adc V fe = 3.0 Adc = 15 Adc I Vdc = 3.0 Adc = 15 Adc I Vdc Collector = 15 Adc V = 1.0 Adc V Forward CB CBO CB mAdc Base Cutoff Current Collector mAdc Base Cutoff Current

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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