X-On Electronics has gained recognition as a prominent supplier of 2N697 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N697 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N697 Microchip

2N697 electronic component of Microchip
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See Product Specifications
Part No.2N697
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: 2N697 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.7537 ea
Line Total: USD 16.75 
Availability - 117
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
117
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 16.7537
100 : USD 16.7217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N697 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N697 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units - 60 V Emitter - 5.0 V EBO 0 Total Power Dissipation T = 25 0.6 W A P 0 T T = 25 2.0 W C 0 - 65 to +200 C T T , J THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 TO-5* Thermal Resistance, Junction - - Case 0.075 R 0 0 1) Derate linearly 4.0 mW/ > 25 A 0 0 2) Derate linearly 13.3 mW/ > 25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V CER R = 10 40 BE C - V = 100 Vdc I 10 V = 30 Vdc 0.1 Emitter - rrent I EBO V = 7.0 Vdc 10 EB (3) ON CHARACTERISTICS - Current Transfer Ratio I = 10 Vdc 2N696,s 60 C CE 20 2N697,s h 120 40 FE I = 10 Vdc 2N696,s 12.5 C CE 2N697,s 20.0 - Emitter Saturation Vo ltage V CE(sat) I 0.3 1.5 C B Base - Emitter Saturation Voltage V BE(sat) I 1.3 C B 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page = 15 mAdc = 150 mAdc, I Vdc = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V Forward Adc Base Cutoff Cu CB CBO CB Adc Base Cutoff Current Collector = 100 mAdc , I (BR) Vdc Emitter Breakdown Voltage Collector package outline *See appendix A for C C for T C C for T JC C/mW to stg Operating & Storage Junction Temperature Range C (2) C (1) Vdc tage Base Vol CBO Vdc Base Voltage Collector 2N696, 2N696s, 2N697, 2N697s SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit DYNAMIC CHARACTERISTICS - Signal Short - Circuit - Curren t Transfer Ratio h I 2N696,s 2.5 10 C CE 2N697,s 3.0 12 Output Capacitance C obo V = 0, 100 kHz 1.0 MHz 2.0 25 E SWITCHING CHARACTERISTICS Turn - t s - P - 19500/ 99) 200 Turn - t s - - 19500/99) 1,000 (3) Pulse Test: Pulse Width 250 to 350 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 s, Duty Cycle PRF (See Figure 4 of MIL off Off Time RF (See Figure 3 of MIL on On Time CB f = 10 Vdc, I pF = 10 Vdc f = 20 MHz = 50 mAdc, V fe Forward Magnitude of Common Emitter Small

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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