X-On Electronics has gained recognition as a prominent supplier of 2N6987 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6987 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6987 Microchip

2N6987 electronic component of Microchip
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See Product Specifications
Part No.2N6987
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small-Signal BJT
Datasheet: 2N6987 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
64: USD 51.8024 ea
Line Total: USD 3315.35 
Availability - 0
MOQ: 64  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 64
Multiples : 1
64 : USD 51.8024

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 65.3276
100 : USD 65.2273

   
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We are delighted to provide the 2N6987 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6987 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices Qualified Level JAN 2N6987 JANTX 2N6988 2N6987U JANTXV JANS (1) MAXIMUM RATINGS Ratings Symbol Value Units ( - Emitter Voltage V 60 CEO - 60 V - 116 Emitter - 5.0 V EBO 600 I C 0 Total Power Dissipation T = +25 C A 1.5 W P T 1.0 0.4 0 - 65 to +200 C T T op , 1) Maximum voltage between transistors shall be 0 0 2) Derate linearly 8.57 mW/ = +25 A 0 0 3) Derate linearly 2.286 mW/ = +25 C. A 4) Ratings apply to each transistor in the array. 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 60 V (BR)CEO I C - Base Cutoff Current 10 V = 60 Vdc I 10 V = 50 Vdc Emitter - 10 V = 5.0 Vd c I BE EBO 50 V = 3.5 Vdc EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Adc Base Cutoff Current CB Adc CBO CB Adc Collector = 10 mAdc Vdc Emitter Breakdown Voltage Collector package outline *See appendix A for 14 PIN FLAT PACK 2N6988* C above T C C above T 500 Vdc stg Operating & Storage Junction Temperature Range 20 PIN LEADLESS 2N6988 (3) 2N6987U* 2N6987U (2) 2N6987 (2) mAdc Collector Current Vdc Base Voltage TO (4) CBO Vdc Base Voltage Collector 2N6987* (4) Vdc Collector 4) 2N6987, 2N6988 JAN, SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS - Current Transfer Ratio 75 I = 10 Vdc C CE 100 450 I = 10 Vdc C CE 100 h FE I = 10 Vdc C CE 100 300 I = 10 Vdc C CE 50 I =1 C CE - Emitter Saturation Voltage 0.4 I V C B CE(sat) 1.6 I B Base - Emitter Voltage 1.3 I V C B BE(sat) 2.6 I = 50 B DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit - Current Transfer Ratio 2.0 8.0 h I = 20 Vdc, f = 100 MHz C CE Small - Signal Short - Circuit Forward Current Transfer Ratio h 100 I = = 10 Vdc, f = 1.0 kHz C CE Output Capacitance C 8.0 obo V = 0, 100 kHz 1.0 MHz E 30 C ibo V = 0, 100 kHz 1.0 MHz EB C nce, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 6 Lake Street, Lawre f = 2.0 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF 1.0 mAdc, V fe = 50 mAdc, V fe Forward C mAdc = 500 mAdc, I = 15 mAdc = 150 mAdc, I Vdc C = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 mAdc, I Collector 0 Vdc = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V = 1.0 mAdc, V = 0.1 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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