X-On Electronics has gained recognition as a prominent supplier of 2N6990 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6990 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N6990 Microchip

2N6990 electronic component of Microchip
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See Product Specifications
Part No.2N6990
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Quad Transistor
Datasheet: 2N6990 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 41.1731 ea
Line Total: USD 41.17 
Availability - 963
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
963
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 41.1731

963
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 41.1731

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6990 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6990 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS (1) MAXIMUM RATINGS Ratings Symbol Value Units C - Emitter Voltage 50 V CEO - 75 TO - 116* V Emitter - 6.0 V EBO 800 I C 0 Total Power Dissipation T = +25 C A 1.5 W P D 1.0 0.4 0 Operat - 65 to +200 C T T op , 1) Maximum voltage between transistors shall be 0 0 2) Derate linearly 8.57 mW/ = +25 A 0 0 Derate linearly 2.286 mW/ = +25 A Ratings apply to total package. 3) Ratings apply to each transistor in the array. 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 50 CEO I C - V = 60 Vdc I 10 V = 10 10 c Emitter - f Current V I EB EBO 10 V = 10 10 EB c 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Adc = 6.0Vdc I Adc = 4.0Vdc Base Cutof CB Adc Adc = 75 Vdc I Adc CBO CB Base Cutoff Current Collector = 10 mAdc (BR) Vdc Emitter Breakdown Voltage Collector outline *See appendix A for package 2N6990 14 PIN FLAT PACK* C for 2N6990 C above T C for 2N6989 and 2N6989U C above T 500 Vdc stg ing & Storage Junction Temperature Range 2N6989U 2N6990 (2) 20 PIN LEADLESS* 2N6989U (2) 2N6989 (2) mAdc Collector Current (3) 2N6989 Vdc Base Voltage (3) CBO Vdc Base Voltage Collector (3) Vdc ollector (3) 2N6989, 2N6990 JAN, SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (4) ON CHARACTERISTICS - Current Transfer Ratio I = 10 Vdc C CE 50 I = 10 Vdc C CE 75 325 h FE I = 10 Vdc C CE 100 I = 10 Vdc 100 300 C C E I = 10 Vdc 30 C CE - Emitter Saturation Voltage 0.3 I V C B CE(sat) 1.0 I B Base - Emitter Saturation Voltage 0.6 1.2 I = 150 V C B BE(sat) 2.0 I B DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit Forward Current Transfer Ratio 2.5 8.0 h I = 10 Vdc, f = 100 MHz C CE Forward Current T ransfer Ratio h 50 I = 10 Vdc, f = 1.0 kHz C CE Output Capacitance C 8.0 obo V = 0, 100 kHz 1.0 MHz E 25 C ibo V = 0, 100 kHz 1.0 MHz EB E (4) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle f = 0.5 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF = 1.0 mAdc, V fe = 20 mAdc, V fe C = 50 mAdc = 500 mAdc, I = 15 mAdc mAdc, I Vdc C = 50 mAdc = 500 mAdc, I = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V = 1.0 mAdc, V = 0.1 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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