2N918 www.centralsemi.com NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 3.0 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 200 mW D Power Dissipation (T=25C) P 300 mW C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 87.5 C/W JA Thermal Resistance 58.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=15V 10 nA CBO CB I V =15V, T=150C 1.0 A CBO CB A BV I=1.0A 30 V CBO C BV I=3.0mA 15 V CEO C BV I=10A 3.0 V EBO E V I =10mA, I=1.0mA 0.4 V CE(SAT) C B V I =10mA, I=1.0mA 1.0 V BE(SAT) C B h V =1.0V, I=3.0mA 20 FE CE C f V =10V, I =4.0mA, f=100MHz 600 MHz T CE C C V =10V, I =0, f=1.0MHz 1.7 pF ob CB E C V =0, I =0, f=1.0MHz 3.0 pF ob EB E C V =0.5V, I =0, f=1.0MHz 2.0 pF ib EB C P V =15V, I =8.0mA, f=500MHz 30 mW o CB C G V =12V, I =6.0mA, f=200MHz 15 dB pe CB C V =15V, I =8.0mA, f=500MHz 25 % CB C NF V =6.0V, I=1.0mA, CE C R =400, f=60kHz 6.0 dB G R1 (11-September 2012)2N918 NPN SILICON RF TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R1 (11-September 2012) www.centralsemi.com