APT60GF60JU3 Microchip

APT60GF60JU3 ISOTOP Buck chopper V = 600V CES I = 60A @ Tc = 95C NPT IGBT C C Application AC and DC motor control Switched Mode Power Supplies G Features Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop E - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current A - RBSOA and SCSOA rated ISOTOP Package (SOT-227) Very low stray inductance High level of integration A Benefits E Outstanding performance at high frequency operation Stable temperature behavior Very rugged C G Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES I T = 25C 93 C1 C Continuous Collector Current A I T = 95C 60 C2 C I Pulsed Collector Current T = 25C 360 CM C V Gate Emitter Voltage 20 V GE P Maximum Power Dissipation T = 25C 378 W D C I RBSOA clamped Inductive load Current R =11 T = 25C 360 A LM G C IF Maximum Average Forward Current Duty cycle=0.5 T = 80C 30 AV C A IF RMS Forward Current (Square wave, 50% duty) 39 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-9 www.microsemi.com APT60GF60JU3 Rev 2 October, 2012 APT60GF60JU3 All ratings @ T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BV Collector - Emitter Breakdown Voltage V = 0V, I = 0.5mA 600 V CES GE C T = 25C j 80 V = 0V GE I Zero Gate Voltage Collector Current A CES V = 600V T = 125C CE j 2000 T = 25C V =15V j 2.0 2.5 GE V Collector Emitter on Voltage V CE(on) I = 60A T = 125C C 2.8 j V Gate Threshold Voltage V = V , I = 500A 3 4 5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 100 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 3125 3590 ies GE V = 25V C Output Capacitance CE 310 450 pF oes f = 1MHz C Reverse Transfer Capacitance 180 310 res Q Total gate Charge 257 410 g V = 15V GS Q Gate Emitter Charge V = 300V 19 30 nC Bus ge I = 60A C Q Gate Collector Charge 120 180 gc T Turn-on Delay Time Resistive Switching (25C) 20 40 d(on) V = 15V GE T Rise Time 95 190 r V = 300V ns Bus T Turn-off Delay Time 315 470 d(off) I = 60A C T Fall Time R = 5 245 490 f G Inductive Switching (25C) T Turn-on Delay Time 26 50 d(on) V = 15V GE T Rise Time 63 125 r ns V = 400V Bus T Turn-off Delay Time 395 590 d(off) I = 60A C T Fall Time 68 140 f R = 5 G E Total switching Losses 3.4 7 mJ ts Inductive Switching (150C) T Turn-on Delay Time 25 50 d(on) V = 15V GE T Rise Time 59 120 r ns V = 400V Bus T Turn-off Delay Time 430 650 d(off) I = 60A C T Fall Time 65 130 f R = 5 G E Turn-on Switching Energy 1.6 3.2 on E Turn-off Switching Energy 2.4 4.8 mJ off E Total switching Losses 4.0 8.0 ts 2-9 www.microsemi.com APT60GF60JU3 Rev 2 October, 2012