APT85GR120B2 L APT85GR120B2 APT85GR120L 1200V, 85A, V = 2.5V Typical ce(on) Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. Features Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 170 C1 C I Continuous Collector Current T = 100C 85 A C2 C 1 I Pulsed Collector Current 340 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 962 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.0mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2.5mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 85A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 85A, T = 125C) 3.3 GE C j Collector-Emitter On Voltage (V = 15V, I = 170A, T = 25C) 3.5 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 10 1000 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 100 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT85GR120B2 L Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 8400 ies C Output Capacitance V = 0V, V = 25V 725 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 190 res V Gate to Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q Total Gate Charge 490 660 g V = 15V GE Q Gate-Emitter Charge 60 85 ge V = 600V nC CE Q Gate- Collector Charge I = 85A 230 320 gc C t Turn-On Delay Time Inductive Switching (25C) 43 d(on) t Current Rise Time V = 600V 70 r CC ns t Turn-Off Delay Time V = 15V 300 d(off) GE t Current Fall Time I = 85A 85 f C 5 4 E Turn-On Switching Energy 6000 9000 R = 4.3 on2 G J 6 3800 5700 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 43 d(on) t Current Rise Time V = 600V 70 r CC ns t Turn-Off Delay Time V = 15V 350 d(off) GE t Current Fall Time 95 I = 85A f C 5 4 E Turn-On Switching Energy 7800 11,700 R = 4.3 on2 G J 6 E Turn-Off Switching Energy 4900 7350 T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance (IGBT) .13 JC C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz B2 6g W Package Weight T .36 oz L 10 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.14 D = 0.9 0.12 0.10 0.7 0.08 0.5 Note: 0.06 t 1 0.3 0.04 t 2 t 1 t Duty Factor D = / 0.1 2 0.02 Peak T = P x Z +T J DM JC C 0.05 SINGLE PULSE 0 -4 -2 -5 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6402 Rev A 8-2012 Z , THERMAL IMPEDANCE (C/W) JC P DM
