APTGF180H60G Microchip

APTGF180H60G Full - bridge V = 600V CES I = 180A Tc = 80C C NPT IGBT Power Module Application Welding converters Switched Mode Power Supplies VBUS Uninterruptible Power Supplies Q1 Q3 Motor control G1 G3 Features E1 E3 Non Punch Through (NPT) Fast IGBT OUT1 OUT2 - Low voltage drop - Low tail current Q2 Q4 - Switching frequency up to 100 kHz G2 G4 - Soft recovery parallel diodes - Low diode VF - Low leakage current E4 E2 - RBSOA and SCSOA rated Kelvin emitter for easy drive 0/VBUS Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25C 220 c I Continuous Collector Current C A T = 80C 180 c I Pulsed Collector Current T = 25C 630 CM c V Gate Emitter Voltage 20 V GE T = 25C P Maximum Power Dissipation 833 W D c RBSOA Reverse Bias Safe Operating Area T = 150C 400A 600V j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-7 www.microsemi.com APTGF180H60G Rev 3 October, 2012 APTGF180H60G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V T = 25C 300 GE j I Zero Gate Voltage Collector Current A CES V = 600V T = 125C 1000 CE j T = 25C 2.0 2.5 V =15V j GE V Collector Emitter saturation Voltage V CE(sat) I = 180A T = 125C C j 2.2 V Gate Threshold Voltage V = V , I = 2mA 3 5 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20 V, V = 0V 200 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 8.6 ies GE V = 25V C Output Capacitance CE 0.94 nF oes f = 1MHz C Reverse Transfer Capacitance 0.8 res Q Total gate Charge 660 g V = 15V GS Q Gate Emitter Charge V = 300V 580 nC Bus ge I = 180A C Q Gate Collector Charge 400 gc T Turn-on Delay Time Inductive Switching (25C) 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 150 d(off) I = 180A C T Fall Time 30 f R = 2.5 G T Turn-on Delay Time Inductive Switching (125C) 26 d(on) V = 15V GE T Rise Time 25 r V = 400V ns Bus T Turn-off Delay Time 170 d(off) I = 180A C T Fall Time 40 f R = 2.5 G V = 15V GE E Turn-on Switching Energy T = 125C 8.6 on j V = 400V Bus mJ I = 180A C E Turn-off Switching Energy T = 125C 7 off j R = 2.5 G Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 350 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 750 j I DC Forward Current T = 80C 200 A F c I = 200A 1.6 1.8 F V Diode Forward Voltage I = 400A 1.9 V F F I = 200A T = 125C F j 1.4 T = 25C 180 j t Reverse Recovery Time ns rr I = 200A F T = 125C 220 j V = 400V R T = 25C 780 di/dt =400A/s j Q Reverse Recovery Charge nC rr T = 125C 2900 j 2-7 www.microsemi.com APTGF180H60G Rev 3 October, 2012