X-On Electronics has gained recognition as a prominent supplier of GRP-DATA-JANS2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. GRP-DATA-JANS2N2222A Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

GRP-DATA-JANS2N2222A Microchip

GRP-DATA-JANS2N2222A electronic component of Microchip
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Part No.GRP-DATA-JANS2N2222A
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small-Signal BJT
Datasheet: GRP-DATA-JANS2N2222A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 200.109 ea
Line Total: USD 200.11 
Availability - 7
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 200.109

   
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Collector- Emitter Voltage VCEO Max
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C TO-18 (TO-206AA) Total Power Dissipation @ T = +25C P 0.5 W 2N2221A, 2N2222A A T Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 4 PIN 2N2221AUB, UBC 2N2222AUB, UBC 325 2N2221AUA, 2N2222AUA Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/C above T > +37.5C A 2. Derate linearly 4.76mW/C above T > +63.5C A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO I = 10mAdc 3 PIN C 2N2221AUB, 2N2222AUB Collector-Base Cutoff Current 2N2221AUBC, 2N2222AUBC V = 75Vdc I 10 Adc CB CBO (UBC = Ceramic Lid Version) V = 60Vdc 10 Adc CB Emitter-Base Cutoff Current V = 6.0Vdc I 10 Adc EB EBO V = 4.0Vdc 10 EB Adc Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 C CE h FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc CE(sat) 0.3 C B I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.2 C B I = 500mAdc, I = 50mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 Magnitude of SmallSignal Short-Circuit Forward Current Transfer Ratio |h | fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.5 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 25 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 35 s on See figure 8 of MIL-PRF-19500/255 Turn-Off Time t 300 s off See Figure 9 of MIL-PRF-19500/255 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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