X-On Electronics has gained recognition as a prominent supplier of Jan2N1893 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. Jan2N1893 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Jan2N1893 Microchip

Jan2N1893 electronic component of Microchip
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See Product Specifications
Part No.Jan2N1893
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: Jan2N1893 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.7958 ea
Line Total: USD 15.8 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 40
Multiples : 1
40 : USD 19.4973

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 15.7958
100 : USD 15.7669

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 18.6541

   
Manufacturer
Product Category
RoHS - XON
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Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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We are delighted to provide the Jan2N1893 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Jan2N1893 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN 2N1893 2N720A JANTX 2N1893S JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Units - Emitter Voltage 80 V CEO - 120 V 7.0 Emitter - V EBO - Emitter Voltage (R = 10 ) 100 TO-18 (TO-206AA)* V CER Collector Current I 500 2N720A C 2N720A 2N1893, S 0 Total Power Dissipation T = +25 0.5 0.8 A W P 0 T T = +25 1.8 3.0 C 0 - 65 to +200 C T T J , THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Unit TO-5* 0 Thermal Resistance, Junction - - Case 97 58 R 2N1893, 2N1893S 0 0 0 1) Derate linearly 2 .86 mW/ C for 2N1893, S T > 25 C A 0 0 0 2) Derate linearly 10.3 mW/ C for 2N1893, S T > 25 C C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V CEO I 80 C - V CER I = 10 100 C BE - V = 120 Vdc I 10 V = 90 Vdc 10 Emitter - V = 7.0 Vdc I EB 10 EBO V = 5.0 Vdc 10 EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Adc Base Cutoff Current CB Adc CBO CB Adc Base Cutoff Current ctor Colle = 10 mAdc, R (BR) Vdc Emitter Breakdown Voltage Collector = 30 mAdc (BR) Vdc Emitter Breakdown Voltage Collector outline *See appendix A for package C for 2N720A, 17.2 mW/ C for 2N720A, 4.57 mW/ JC C/W to srg Operating & Storage Junction Temperature Range C (2) C (1) mAdc BE Vdc Collector Base Voltage Vdc CBO Vdc Base Voltage tor Collec Vdc Collector 2N720A 2N1893 2N1893S JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio I V = 10 Vdc C CE 20 h FE I = 10 Vdc C CE 35 I = 10 Vdc 40 120 C CE - Emitter Saturation Voltage V CE(sat) I 5.0 C B Base - Emitter Voltage V c BE(sat) I 1.3 C B DYNAMIC CHARACTERISTICS - Signal Short - Circuit Forward Current Transfer Ratio h I = 10 Vdc, f = 20 MHz 3.0 10 C CE Small - Signal Short - Circuit Forward Current Transfer Ratio V = 1.0 h CE 35 V 45 100 CE Small - Signal Short - h ib V 4.0 8.0 Small - Signal Short - Circuit Output Admittance h ob V 0.5 Output Capac itance F C P obo V = 0, 100 kHz f 1.0 MHz 2 15 E SWITCHING CHARACTERISTICS Turn - On Time + Turn - t t s - - 19500/182) 30 (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle PRF (See Figure 3 of MIL off on + Off Time CB = 10 Vdc, I C CB = 5.0 mAdc = 10 Vdc, I C CB = 5.0 mAdc = 10 Vdc, I Circuit Input Impedance C = 5.0 mAdc, f = 1.0 kHz =10 Vdc, I fe C mAdc =5.0 Vdc, I = 50 mAdc, V fe Magnitude of Common Emitter Small = 15 mAdc = 150 mAdc, I Vd = 15 mAdc = 150 mAdc, I Vdc Collector = 150 mAdc, V = 10 mAdc, V = 0.1 mAdc, Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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