TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/395
DEVICES LEVELS
2N3735 2N3735L JAN
2N3737 2N3737UB JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted)
C
Parameters / Test Conditions Symbol Min. Unit
Collector-Emitter Voltage V 40 Vdc
CEO
Collector-Base Voltage V 75 Vdc
CBO
Emitter-Base Voltage V 5 Vdc
EBO
TO-5*
Collector Current I 1.5 Adc
C
2N3735L
2N3735, 2N3735L 1.0 (1) W
Total Power Dissipation
2N3737 P 0.5 (3) W
T
@ T = +25C
A
2N3737UB 0.5 (5) W
2N3735, 2N3735L 2.9 (2) W
Total Power Dissipation
2N3737 P 1.9 (4) W
T
@ TC = +25C
2N3737UB N/A W
Operating & Storage Junction Temperature Range T , T -65 to +200 C
J stg
* Electrical characteristics for L suffix devices are identical to the non L corresponding
devices.
(1) Derate linearly at 5.71 mW/C above T = +25C
A
TO-39* (TO-205AD)
(2) Derate linearly at 16.6 mW/C above T = +25C
A
2N3735
(3) Derate linearly at 2.86 mW/C above T = +25C
A
(4) Derate linearly at 11.3 mW/C above T = +25C
A
(5) Derate linearly at 3.07 mW/C above T = +25C
A
(6) T = +55C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1
A
layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2
mm), R with a defined thermal resistance condition included is measured at P =
JA T
500mW.
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
3 PIN
2N3737UB
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V 40 Vdc
(BR)CEO
I = 10mAdc
C
Collector-Base Cutoff Current
10 Adc
V = 75Vdc I
CB
CBO
250
Adc
V = 30Vd
CB
TO-46 (TO-206AB)
2N3737
T4-LDS-0173 Rev. 1 (101069) Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted)
A
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector- Emitter Cutoff Current
200 nAdc
V = 30Vdc, V = 2.0Vdc I
CE EB CEX
250
Adc
V = 30Vdc, V = 2.0Vdc TA = +150C
CE EB
Emitter-Base Cutoff Current
10 Adc
V = 5.0Vdc I
EB EBO
100
nAdc
V = 4.0Vdc
EB
(1)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I = 10mAdc, V = 1.0Vdc 35
C CE
I = 150mAdc, V = 1.0Vdc 40
C CE
h
I = 500mAdc, V = 1.0Vdc 40 150
FE
C CE
I = 1.0Adc, V = 1.5Vdc 20 80
C CE
I = 1.5Adc, V = 5.0Vdc 20
C CE
Collector-Emitter Saturation Voltage
I = 10mAdc, I = 1.0mAdc 0.2
C B
I = 150mAdc, I = 15.0mAdc 0.3
C B
V Vdc
CE(sat)
I = 500mAdc, I = 50.0mAdc 0.5
C B
I = 1.0Adc, I = 100mAdc 0.9
C B
Base-Emitter Saturation Voltage
I = 10mAdc, I = 1.0mAdc 0.8
C B
I = 150mAdc, I = 15.0mAdc 1.0
C B
V Vdc
BE(sat)
I = 500mAdc, I = 50.0mAdc 1.2
C B
I = 1.0Adc, I = 100mAdc 1.4
C B
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
|h |
fe
I = 50mAdc, V = 10Vdc, f = 100MHz 2.5 6.0
C CE
Delay Response
I = 1.0Adc, V = 2Vdc, I = 100mA t 8
C BE B2 s
d
V = 30Vdc
CC
Turn-Off Time
t
I = 1.0Adc, I = I = 100mAdc, V = 30Vdc 60 s
off
C B1 B2 CC
Rise Time
t 40
s
r
I = 1.0Adc, V = 2Vdc, V = 30Vdc
C BE CC
Output Capacitance
C 9 pF
obo
V = 10Vdc, I = 0, 100 kHz f 1.0MHz
CB E
Input Capacitance
C 80 pF
V = 0.5Vdc, I = 0, 100 kHz f 1.0MHz ibo
EB C
(1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%
T4-LDS-0173 Rev. 1 (101069) Page 2 of 5