X-On Electronics has gained recognition as a prominent supplier of Jan2N3740 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. Jan2N3740 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Jan2N3740 Microchip

Jan2N3740 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.Jan2N3740
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Transistor
Datasheet: Jan2N3740 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

22: USD 34.4778 ea
Line Total: USD 758.51

Availability - 0
MOQ: 22  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 22
Multiples : 1
22 : USD 34.4778
220 : USD 32.4367

0
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 35.2603

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the Jan2N3740 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Jan2N3740 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/441 DEVICES LEVELS 2N3740 2N3741 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol 2N37402N3741Unit Collector-Emitter Voltage V 60 80 Vdc CEO Collector-Base Voltage V 60 80 Vdc CBO Emitter-Base Voltage V 7.0 Vdc EBO Base Current I 2.0 Adc B Collector Current I 4.0 Adc C (1) T = +25C 25 A Total Power Dissipation P W T T = +100C 14 C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg TO-66 (TO-213AA) Thermal Resistance, Junction-to-Case R 7.0 C/W JC * See Appendix A for Note: (1) Derate linearly 143 mW/C for T > +25C Package Outline C ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage I = 100mAdc 2N3740 C V 60 Vdc (BR)CEO 2N3741 80 Collector-Emitter Cutoff Current V = 40Vdc 2N3740 CE I 10 Adc CEO V = 60Vdc 2N3741 CE 10 Collector-Emitter Cutoff Current 2N3740 V = 60Vdc, V = 1.5Vdc CE BE I 300 Adc CEX 2N3741 V = 80Vdc, V = 1.5Vdc CE BE 300 Collector-Base Cutoff Current 2N3740 V = 60Vdc I 100 Adc CB CBO 2N3741 V = 80Vdc 100 CB Emitter-Base Cutoff Current I 100 Adc EBO V = 7.0Vdc EB T4-LDS-0021 Rev. 2 (100698) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 100mAdc, V = 1.0Vdc 40 C CE I = 250mAdc, V = 1.0Vdc 30 120 C CE h FE I = 500mAdc, V = 1.0Vdc 20 C CE I = 1.0Adc, V = 1.0Vdc 10 C CE I = 4.0Adc, V = 5.0Vdc 3.0 C CE Collector-Emitter Saturation Voltage I = 250mAdc, I = 25mAdc V 0.4 Vdc C B CE(sat) I = 1.0Adc, I = 125mAdc 0.6 C B Base-Emitter Voltage V 1.0 Vdc BE(on) I = 250mAdc, V = 1.0Vdc C CE DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio h 1.0 12 fe I = 100mAdc, V = 10Vdc, f = 5.0MHz C CE Small-Signal Short-Circuit Forward Current Transfer Ratio h 25 250 fe I = 50mAdc, V = 10Vdc, f = 1.0kHz C CE Output Capacitance C 100 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 400 s on V = 30Vdc I = 1.0Adc I = 0.1Adc CC C B Turn-Off Time t 1.0 s off V = 30Vdc I = 1.0Adc I = I = 0.1Adc CC C B1 B2 SAFE OPERATING AREA DC Tests T = +25C, 1 Cycle, t = 1.0s C Test 1 V = 6.25Vdc, I = 4.0Adc CE C Test 2 V = 20Vdc, I = 1.25Adc CE C Test 3 V = 50Vdc, I = 150mAdc CE C 2N3740 V = 65Vdc, I = 150mAdc 2N3741 CE C (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0021 Rev. 2 (100698) Page 2 of 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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