The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 12 June 2013. MIL-PRF-19500/355R 12 March 2013 SUPERSEDING MIL-PRF-19500/355P 9 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON, TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators M, D, P, L, R, F, G and H are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and JANKCA die), and figure 4 (JANHCB and JANKCB die). 1.3 Maximum ratings. Unless otherwise specified, T =+25C. C Type I V V V C CBO CEO EBO mA dc V dc V dc V dc All types 30 70 60 6 P (1) P (2) R R T T JA JC T and T J STG T = +25C T = +25C A C One Both One Both One Both One Both section sections section sections section sections section sections mW mW mW mW C/W C/W C/W C/W C 200 350 300 450 875 500 583 388 -65 to +200 (1) For T > +25C, derate linearly 1.143 mW/C, one section 2.000 mW/C, both sections. A (2) For T > +25C, derate linearly 1.714 mW/C, one section 2.571 mW/C, both sections. C * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/355R 1.4 Primary electrical characteristics of each individual section. Unless otherwise specified, T =+25C. C h h V FE1 fe CE(SAT) V = 5 V dc V = 5 V dc I = 1 mA dc CE CE C I = 10 A dc I = 0.5 mA dc I = 100 A dc C C B 2N2919 2N2919L 2N2920 2N2920L f = 20 MHz 2N2919U 2N2920U V dc Min 60 175 3.0 Max 240 600 20 0.3 * 1.5 Primary electrical matching characteristics of each individual section. Unless otherwise specified, T =+25C. C V - V h 1 (V - V ) (V - V ) BE1 BE2 BE1 BE2 TA 1 BE1 BE2 TA 2 FE 21 h FE 22 V = 5 V dc V = 5 V dc V = 5 V dc V = 5 V dc CE CE CE CE I = 100 A dc I = 10 A dc I = 100 A dc I = 100 A dc C C C C (1) T = +25C and -55C T = +125C and +25C A A mV dc mV dc mV dc Min 0.9 * Max 1.1 5 0.8 1.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at