TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JANSM 3K Rads (Si) 2N5151 2N5153 JANSD 10K Rads (Si) 2N5151L 2N5153L JANSP 30K Rads (Si) 2N5151U3 2N5153U3 JANSL 50K Rads (Si) JANSR 100K Rads (Si) JANSF 300K Rads (Si) ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 80 Vdc CEO Collector-Base Voltage V 100 Vdc CBO Emitter-Base Voltage V 5.5 Vdc EBO Collector Current I 2.0 Adc C Total Power Dissipation (1) 2N5151, 2N5153, L T = +25C 1.0 A (2) TO-5 2N5151, 2N5153, L T = +25C P 10 W T C (3) 2N5151L, 2N5153L 2N5151U3, 2N5153U3 T = +25C 1.16 A (4) (See Figure 1) 2N5151U3, 2N5153U3 T = +25C 100 C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg 10 Thermal Resistance, Junction-to Case R C/W JC 1.75 (U3) Note: 1) Derate linearly 5.7mW/C for T > +25 A 2) Derate linearly 66.7mW/C for T > +25 A 3) Derate linearly 6.63mW/C for T > +25 A 4) Derate linearly 571mW/C for T > +25 A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A TO-39 (TO-205AD) 2N5151, 2N5153 Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 80 Vdc (BR)CEO I = 100mAdc, I = 0 C B Emitter-Base Cutoff Current V = 4.0Vdc, I = 0 I 1.0 Adc EB C EBO V = 5.5Vdc, I = 0 1.0 mAdc EB C Collector-Emitter Cutoff Current V = 60Vdc, V = 0 I 1.0 Adc CE BE CES V = 100Vdc, V = 0 1.0 mAdc CE BE U-3 Collector-Base Cutoff Current I 50 Adc CEO 2N5151U3, 2N5153U3 V = 40Vdc, I = 0 CE B T4-LDS-0131 Rev. 1 (091476) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio I = 50mAdc, V = 5Vdc 2N5151 20 C CE 2N5153 50 I = 2.5Adc, V = 5Vdc 2N5151 30 90 C CE h FE 2N5153 70 200 I = 5Adc, V = 5Vdc 2N5151 20 C CE 2N5153 40 Collector-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 0.75 C B V Vdc CE(sat) I = 5.0Adc, I = 500mAdc 1.5 C B Base-Emitter Voltage Non-Saturation V 1.45 Vdc BE I = 2.5Adc, V = 5Vdc C CE Base-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 1.45 C B V Vdc BE(sat) I = 5.0Adc, I = 500mAdc 2.2 C B DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I = 500mAdc, V = 5Vdc, f = 10MHz 2N5151 h 6 C CE fe 2N5153 7 Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio h fe I = 100mAdc, V = 5Vdc, f = 1kHz 2N5151 20 C CE 2N5153 50 Output Capacitance C 250 obo pF V = 10Vdc, I = 0, f = 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time I = 5Adc, I = 500mAdc C B1 I = -500mAdc t 0.5 s B2 on R = 6 L V = 3.7Vdc BE(OFF) Turn-Off Time I = 5Adc, I = 500mAdc C B1 I = -500mAdc t 1.5 s B2 off R = 6 L V = 3.7Vdc BE(OFF) T4-LDS-0131 Rev. 1 (091476) Page 2 of 4