TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit - Emitter Voltage 60 V CEO - Base 100 V Emitter - 7.0 V EBO 500 I C 0 Total Power Dissipation T = +25 540 600 A P 0 T T = +25 1.5 2.12 W C 0 - 65 to +200 C T T , J 0 0 0 1) Derate linearly 3.08 mW/ > 25 A TO - 78* 0 0 0 2) Derate linearly 8.6 mW/ > 25 C * 0 ELECTRICAL CHARACTERISTICS (T = +25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 80 CER R 10 BE C - E 60 V CEO I C - 10 V = 100 Vdc I 2.0 V = 80 Vdc Emitter - 10 V = 7.0 Vdc I EB EBO 2.0 V = 5.0 Vdc EB 6 Lake Street, 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Lawrence, MA 01841 Adc Adc Base Cutoff Current CB Adc CBO CB Adc Base Cutoff Current Collector = 30 mAdc (BR) Vdc mitter Breakdown Voltage Collector = 10 mAdc , I (BR) Vdc Emitter Breakdown Voltage Collector (3) package outline See appendix A for C for both sections C for one section, 12.1 mW/ C for T C for both sections C for one section, 3.48 mW/ C for T stg Storage Junction Temperature Range Operating & C (2) mW C (1) Sections Section Both One mAdc Collector Current Vdc Base Voltage CBO Vdc Voltage Collector Vdc Collector 2N2060, 2N2060L JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 25 75 I = 10 = 5.0 Vdc C CE 30 90 h I = 100 = 5.0 Vdc FE C CE 40 120 I = 5.0 Vdc C CE 50 150 I = 5.0 Vdc C CE - Emitter Saturation Voltage V 0.3 CE(sat) I = 50 m C B Base - Emitter Saturation Voltage V 0.9 BE(sat) I C B DYNAMIC CHARACTERISTICS - Signal Short - Circuit - Current Transfer ratio 3 25 h I C CE Small - Signal Short - 20 30 h I = 5.0 Vdc, f = 1.0 kHz C Small - Signal Short - Circuit Forward - Current Transfer Ratio 50 150 h I = 5.0 Vdc, f = 1.0 kHz C CE Small - Signal Short - h 1,000 4,000 ie I = 5.0 Vdc, f = 1.0 kHz C CE Small - Signal Open - Circuit Output Admittance 0 16 h I = 5.0 Vdc, f = 1.0 kHz C CE C 85 ibo V = 0, 100 kHz 1.0 M EB E Output Capacitance 15 C obo V = 0, 100 kHz 1.0 MHz E (3)Pulse Test: Pulse Width 250 to 350 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle CB f = 10 Vdc, I pF Hz f = 0.5 Vdc, I pF Input Capacitance = 1.0 mAdc, V oe mhos = 1.0 mAdc, V Circuit Input Impedance = 1.0 mAdc, V fe CB = 1.0 mAdc, V ib Circuit Input Impedance 20 MHz = 10 Vdc, f = = 50 mAdc, V fe Forward Common Emitter Small = 5.0 mAdc = 50 mAdc, I Vdc = 5.0 mAdc Adc, I Vdc Collector = 10 mAdc, V = 1.0 mAdc, V Adc, V Adc, V Forward