X-On Electronics has gained recognition as a prominent supplier of JANTX2N2060 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTX2N2060 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTX2N2060 Microchip

JANTX2N2060 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.JANTX2N2060
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 60V 0.5A 6-Pin TO-78
Datasheet: JANTX2N2060 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 71.963 ea
Line Total: USD 719.63 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 10
Multiples : 1
10 : USD 71.963
100 : USD 69.0646
1000 : USD 67.6833

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 76.7124

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 88.5221
2 : USD 82.8345
3 : USD 81.1778

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Collector Current Dc Max
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain Min
Operating Temperature Classification
Category
Rad Hardened
Collector Current Dc
Dc Current Gain
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANTX2N2060 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N2060 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices Qualified Level JAN 2N2060 JANTX 2N2060L JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit - Emitter Voltage 60 V CEO - Base 100 V Emitter - 7.0 V EBO 500 I C 0 Total Power Dissipation T = +25 540 600 A P 0 T T = +25 1.5 2.12 W C 0 - 65 to +200 C T T , J 0 0 0 1) Derate linearly 3.08 mW/ > 25 A TO - 78* 0 0 0 2) Derate linearly 8.6 mW/ > 25 C * 0 ELECTRICAL CHARACTERISTICS (T = +25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 80 CER R 10 BE C - E 60 V CEO I C - 10 V = 100 Vdc I 2.0 V = 80 Vdc Emitter - 10 V = 7.0 Vdc I EB EBO 2.0 V = 5.0 Vdc EB 6 Lake Street, 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Lawrence, MA 01841 Adc Adc Base Cutoff Current CB Adc CBO CB Adc Base Cutoff Current Collector = 30 mAdc (BR) Vdc mitter Breakdown Voltage Collector = 10 mAdc , I (BR) Vdc Emitter Breakdown Voltage Collector (3) package outline See appendix A for C for both sections C for one section, 12.1 mW/ C for T C for both sections C for one section, 3.48 mW/ C for T stg Storage Junction Temperature Range Operating & C (2) mW C (1) Sections Section Both One mAdc Collector Current Vdc Base Voltage CBO Vdc Voltage Collector Vdc Collector 2N2060, 2N2060L JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 25 75 I = 10 = 5.0 Vdc C CE 30 90 h I = 100 = 5.0 Vdc FE C CE 40 120 I = 5.0 Vdc C CE 50 150 I = 5.0 Vdc C CE - Emitter Saturation Voltage V 0.3 CE(sat) I = 50 m C B Base - Emitter Saturation Voltage V 0.9 BE(sat) I C B DYNAMIC CHARACTERISTICS - Signal Short - Circuit - Current Transfer ratio 3 25 h I C CE Small - Signal Short - 20 30 h I = 5.0 Vdc, f = 1.0 kHz C Small - Signal Short - Circuit Forward - Current Transfer Ratio 50 150 h I = 5.0 Vdc, f = 1.0 kHz C CE Small - Signal Short - h 1,000 4,000 ie I = 5.0 Vdc, f = 1.0 kHz C CE Small - Signal Open - Circuit Output Admittance 0 16 h I = 5.0 Vdc, f = 1.0 kHz C CE C 85 ibo V = 0, 100 kHz 1.0 M EB E Output Capacitance 15 C obo V = 0, 100 kHz 1.0 MHz E (3)Pulse Test: Pulse Width 250 to 350 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle CB f = 10 Vdc, I pF Hz f = 0.5 Vdc, I pF Input Capacitance = 1.0 mAdc, V oe mhos = 1.0 mAdc, V Circuit Input Impedance = 1.0 mAdc, V fe CB = 1.0 mAdc, V ib Circuit Input Impedance 20 MHz = 10 Vdc, f = = 50 mAdc, V fe Forward Common Emitter Small = 5.0 mAdc = 50 mAdc, I Vdc = 5.0 mAdc Adc, I Vdc Collector = 10 mAdc, V = 1.0 mAdc, V Adc, V Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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