TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA JAN 2N2484UB JANTX 2N2484UBC * JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 50 mAdc C (1) Total Power Dissipation T = +25C P 360 mW TO-18 (TO-206AA) A T 2N2484 Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Value Unit Thermal Resistance, Ambient-to-Case 2N2484 325 R C/W JA 2N2484UA 275 2N2484UB, UBC 350 1. See 19500/376 for Thermal Performance Curves. 2N2484UA ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 60 Vdc (BR)CEO I = 10mAdc C Collector-Emitter Cutoff Current I 5.0 Adc CES V = 45Vdc CE 2N2484UB, UBC Collector-Base Cutoff Current (UBC = Ceramic Lid Version) 5.0 Adc V = 45Vdc I CB CBO 10 Adc V = 60Vdc CB Collector-Emitter Cutoff Current I 2.0 Adc CEO V = 5.0Vdc CE T4-LDS-0058 Rev. 1 (080853) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Cutoff Current V = 5.0Vdc 2.0 I Adc EB EBO V = 6.0Vdc 10 EB Adc (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 1.0Adc, V = 5.0Vdc 45 C CE 200 500 I = 10 Adc, V = 5.0Vdc C CE 225 675 I = 100Adc, V = 5.0Vdc C CE h FE 250 800 I = 500Adc, V = 5.0Vdc C CE 250 800 I = 1.0mAdc, V = 5.0Vdc C CE 225 800 I = 10mAdc, V = 5.0Vdc C CE Collector-Emitter Saturation Voltage V 0.3 Vdc CE(sat) I = 1.0mAdc, I = 100Adc C B Base-Emitter Voltage V 0.5 0.7 Vdc BE(ON) V = 5.0Vdc, I = 100Adc CE C DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio I = 50 Adc, V = 5.0Vdc, f = 5.0MHz 3.0 h C CE fe 2.0 0.7 I = 500Adc, V = 5.0Vdc, f = 30MHz C CE Open Circuit Output Admittance h 40 mhos oe I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz C CE Open Circuit Reverse-Voltage Transfer Ratio -4 h 8.0 x 10 re I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz C CE Input Impedance h 3.5 24 k je I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz C CE Small-Signal Short-Circuit Forward Current Transfer Ratio h 250 900 fe I = 1.0mAdc, V = 5.0Vdc, f = 1.0kHz C CE Output Capacitance C 5.0 pF obo V = 5.0Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 6.0 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0058 Rev. 1 (080853) Page 2 of 2