X-On Electronics has gained recognition as a prominent supplier of JANTX2N3055 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTX2N3055 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTX2N3055 Microchip

JANTX2N3055 electronic component of Microchip
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Part No.JANTX2N3055
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 70V 15A 3-Pin(2+Tab) TO-3
Datasheet: JANTX2N3055 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
14: USD 52.4704 ea
Line Total: USD 734.59 
Availability - 0
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 14
Multiples : 1
14 : USD 52.4704
140 : USD 50.3613
1400 : USD 49.3541

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 89.5724

   
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We are delighted to provide the JANTX2N3055 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX2N3055 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices Qualified Level JAN 2N3055 JANTX MAXIMUM RATINGS Ratings Symbol Value Units - Emitter Voltage V 70 CEO - 100 V E mitter - V 7.0 EBO Base Current 7.0 I B I 15 C 0 Total Power Dissipation T = 25 6.0 W A P 0 T T = 25 117 W C 0 Operating & Storage Temperature Range - 65 to +200 C T T op, THERMAL CHARACTERISTICS TO - 3* Characteristics Symbol Max. Unit 0 (TO - Thermal Resistance, Junction - - Case 1.5 R 0 0 1) Derate linearly 34.2 mW/ > +25 A 0 0 2) Derate linearly 668 mW/ > +25 C C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - 70 V CEO I C - V 80 R) CER I = 100 C - V 90 CEX V = - BE C - Emitter Cutoff Current 1.0 I CEO V = 60 Vdc CE - Emitter Cutoff Current I 1.0 CEX V = - = 100 Vdc BE CE tter - I 1.0 EBO V = 7.0 Vdc EB 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page mAdc Base Cutoff Current Emi 1.5 Vdc V mAdc Collector mAdc Collector = 200 mAdc 1.5 Vdc, I (BR) Vdc Emitter Breakdown Voltage Collector BE = 200 mAdc, R (B Vdc Emitter Breakdown Voltage Collector = 200 mAdc (BR) Vdc Emitter Breakdown Voltage Collector Package Outline dix A for *See Appen C for T C C for T JC C/W to 204AA) stg C (2) C (1) Adc Collector Current Adc Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc Collector 2N3055 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS - Current Transfer Ratio 40 I = 4.0 Vdc C CE h 20 60 FE I = 4.0 Vdc C CE 5.0 I = 4.0 Vdc C CE - Emitter Saturation Voltage 0.75 I V C B CE(sat) 2.0 I C B Base - Emitter Saturation Voltage V 1.4 BE(sat) I = 4.0 Adc, V = 4.0 Vdc C CE DYNAMIC CHARACTERISTICS - Signal Short - Circuit ward Current Transfer Ratio 8.0 40 h I = 4.0 Vdc, f = 100 kHz C CE Output Capacitance C 700 obo V = 0, 100 kHz 1.0 MHz E SWITCHING CHARACTERISTICS Turn - t 6 .0 s V C B1 Turn - t 12 s V = - I C B1 B2 SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t = 1.0 s C Test 1 V CE C Test 2 V CE C Switching Tests 0 T C 10% R 0.1 A S Test 1 t = 5.0 ms R = 2.0 V = 100 V P BB1 1 BB2 BB2 C Test 2 t = 20 ms R = 30 V = 100 V P BB1 BB1 BB2 BB2 C Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 6 Lake CC = 3.8 Adc = 1.5 Vdc I 10 Vdc V 10 Vdc R CC BB = 15 Adc = 1.5 Vdc I 10 Vdc V 10 Vdc R duty cycle = +25 = 1.67 Adc = 70 Vdc, I = 15 Adc = 7.8 Vdc, I CC = 0.4 Adc = 4.0 Adc I = 30 Vdc I off Off Time CC = 0.4 Adc = 4.0 Adc I = 30 Vdc I on On Time CB f = 10 Vdc, I pF = 4.0 Adc, V fe For Magnitude of Common Emitter Small Vdc = 3.3 Adc = 10 Adc, I Vdc = 0.4 Adc = 4.0 Adc, I Collector = 10 Adc, V = 4.0 Adc, V = 0.5 Adc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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