TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2N3637L JANTX 2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C 2N3634* 2N3636* Parameters / Test Conditions Symbol Unit 2N3635* 2N3637* Collector-Emitter Voltage V 140 175 Vdc CEO Collector-Base Voltage V 140 175 Vdc CBO Emitter-Base Voltage V 5.0 5.0 Vdc EBO TO-5* Collector Current I 1.0 1.0 Adc C 2N3634L, 2N3635L 2N3636L, 2N3637L Total Power Dissipation T = +25C 1.0 W A T = +25C P ** 5.0 W C T UB: T = +25C 1.5 W C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg * Electrical characteristics for L suffix devices are identical to the non L corresponding devices. ** Consult 19500/357 for De-Rating curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit TO-39* (TO-205AD) 2N3634, 2N3635 OFF CHARACTERTICS 2N3636, 2N3637 Collector-Emitter Breakdown Voltage I = 10mAdc C 2N3634, 2N3635 V 140 Vdc (BR)CEO 2N3636, 2N3637 175 Collector-Base Cutoff Current Adc V = 100Vdc 100 CB I Adc V = 140Vdc 2N3634, 2N3635 CBO 10 CB Adc V = 175Vdc 2N3636, 2N3637 10 CB 3 PIN Emitter-Base Cutoff Current 2N3634UB, 2N3635UB V = 3.0Vdc 50 Adc EB I EBO 2N3636UB, 2N3637UB V = 5.0Vdc 10 EB Adc Collector-Emitter cutoff Current I 10 Adc CEO V = 100Vdc CE T4-LDS-0156 Rev. 2 (101452) Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (1) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N3634, 2N3636 25 C CE I = 1.0mAdc, V = 10Vdc 45 C CE I = 10mAdc, V = 10Vdc 50 C CE I = 50mAdc, V = 10Vdc 50 150 C CE I = 150mAdc, V = 10Vdc 30 C CE h FE I = 0.1mAdc, V = 10Vdc 2N3635, 2N3637 55 C CE I = 1.0mAdc, V = 10Vdc 90 C CE I = 10mAdc, V = 10Vdc 100 C CE I = 50mAdc, V = 10Vdc 100 300 C CE I = 150mAdc, V = 10Vdc 60 C CE Collector-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.3 C B V Vdc CE(sat) I = 50mAdc, I = 5.0mAdc 0.6 C B Base-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.8 C B V Vdc BE(sat) I = 50mAdc, I = 5.0mAdc 0.65 0.9 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio I = 30mAdc, V = 30Vdc, f = 100MHz 2N3634, 2N3636 1.5 8.0 C CE h fe 2N3635, 2N3637 2.0 8.5 Forward Current Transfer Ratio I = 10mAdc, V = 10Vdc, f = 1.0kHz 2N3634, 2N3636 h 40 160 C CE fe 2N3635, 2N3637 80 320 Small-Signal Short-Circuit Input Impedance I = 10mAdc, V = 10Vdc, f = 1.0kHz 2N3634, 2N3636 100 600 h C CE ie 2N3635, 2N3637 200 1200 Small-Signal Open-Circuit Input Impedance h 200 s I = 10mAdc, V = 10Vdc, f = 1.0kHz oe C CE Output Capacitance C 10 pF V = 20Vdc, I = 0, 100 kHz f 1.0MHz CB E obo Input Capacitance C 75 pF V = 1.0Vdc, I = 0, 100 kHz f 1.0MHz EB C ibo Noise Figure f = 100Hz 5.0 V = 10Vdc, I = 0.5mAdc, R = 1.0k CE C g NF dB f = 1.0kHz 3.0 f = 10kHz 3.0 (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0156 Rev. 2 (101452) Page 2 of 5