TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 DEVICES LEVELS 2N3996 2N3997 2N3998 2N3999 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 80 Vdc CEO Collector-Base Voltage V 100 Vdc CBO Emitter-Base Voltage V 8.0 Vdc EBO Base Current I 0.5 Adc B (1) Collector Current I 10 Adc C (2) T = +25C 2.0 A Total Power Dissipation P W (3) T T = +100C 30 C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg TO-111 2N3996, 2N3997 Thermal Resistance, Junction-to-Case R 3.33 C/W JC Note: (1) This value applies for Tp 1.0ms, duty cycle 50% (2) Derate linearly 11.4 mW/C for T > +25C A (3) Derate linearly 300 mW/C for T > +100C C ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 80 Vdc (BR)CEO I = 50mAdc C Collector-Emitter Breakdown Voltage V 100 Vdc (BR)CBO I = 10Adc C Collector-Emitter Cutoff Current I 10 Adc CEO V = 60Vdc CE TO-59 Collector-Emitter Cutoff Current 2N3998, 2N3999 I 200 Adc CES V = 80Vdc, V = 0V CE BE Emitter-Base Cutoff Current V = 5.0Vdc EB I 200 Adc EBO V = 8.0Vdc EB 10 Adc T4-LDS-0165 Rev. 1 (100688) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio 2N3996, 2N3998 30 I = 50mAdc, V = 2.0Vdc C CE 40 120 I = 1.0Adc, V = 2.0Vdc C CE 15 I = 5.0Adc, V = 5.0Vdc h C CE FE I = 50mAdc, V = 2.0Vdc 2N3997, 2N3999 60 C CE I = 1.0Adc, V = 2.0Vdc 80 240 C CE I = 5.0Adc, V = 5.0Vdc 20 C CE Collector-Emitter Saturation Voltage I = 1.0Adc, I = 0.1Adc V 0.25 Vdc C B CE(sat) I = 5.0Adc, I = 0.5Adc 2.0 C B Base-Emitter Saturation Voltage I = 1.0Adc, I = 0.1Adc V 0.6 1.2 Vdc C B BE(sat) I = 5.0Adc, I = 0.5Adc 1.6 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio h fe 3.0 12 I = 1.0Adc, V = 5.0Vdc, f = 10MHz C CE Output Capacitance C 150 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E SAFE OPERATING AREA DC Tests T = +100C, 1 Cycle, t = 1.0s C Test 1 V = 80Vdc, I = 0.08Adc CE C Test 2 V = 20Vdc, I = 1.5Adc CE C (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0165 Rev. 1 (100688) Page 2 of 4