TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices Qualified Level
JAN
2N5415 2N5416
JANTX
2N5415S 2N5416S
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5415 2N5416 Units
- Emitter Voltage 200 3 00
V
CEO
- 200 350
V
Emitter - 6.0
V
EBO
TO - 5*
1.0
I
C
0
, 2N5416
Total Power Dissipation @ T = +25 C 0.75 W
A
P
0
T
@ T = +25 C 10 W
C
0
Operating & Storage Temperature R - 65 to +200 C
T T
,
op
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction - - Case 17.5
R
, 2N5416S
0 0
1) Derate linearly 4.28 mW/ > +25
A
TO - 39*
0 0
2) Derate linearly 57.1 mW/ > +25
C
(TO -
0
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
- Emitter Cutoff Current
V = 150 Vdc
CE
50
I
V = 200 Vdc CEO
CE
1.0
V = 250 Vdc
CE 50
V = 300 Vdc 1.0
CE
Emitter -
I
EBO
V = 6.0 Vdc
20
EB
- Emitter Cutoff Current
V = 200 Vdc, V = 1.5 Vdc I
CE BE CEX 5 0
V = 300 Vdc, V 50
CE BE
-
V = 175 Vdc I
CBO1 50
V = 280 Vdc 50
-
V = 200 Vdc I
CBO2 500
V = 350 Vdc 500
6 Lake Street, Lawrence, MA 01841 120101
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of 2 Page
CB
2N5416
CB
Adc 2N5415
Base Cutoff Current Collector
CB
2N5416
CB
2N5415
Adc
Base Cutoff Current Collector
2N5416 = 1.5 Vdc
Adc
2N5415
Adc
Collector
Adc
Base Cutoff Current
2N5416
mAdc
2N5416
Adc
2N5415
mAdc
Adc 2N5415
Collector
package outline
A for *See appendix
205AD)
C C for T
C C for T
2N5415S
JC
C/W to
stg
ange
2N5415
Adc Collector Current
Vdc Base Voltage
CBO
Vdc Base Voltage Collector
Vdc Collector
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (cont)
Characteristics Symbol Min. Max. Unit
(3)
ON CHARACTERISTICS
- Curren t Transfer Ratio
30 120
I = 10 Vdc
h
C CE FE
15
I = 10 Vdc
C CE
- Emitter Saturation Voltage 2.0
V
CE(sat)
I
C B
Base - Emitter Voltage 1.5
V V
BE
I = 10 Vdc
C CE
DYNAMIC CHARACTERISTICS
- Signal Short Circuit Forward
Current Transfer Ratio
3.0 15
h
I = 10 Vdc, f = 5.0 MHz
C CE
Forward Current Transfer Ratio
h 25
I = 10 Vdc, f = 1.0 kHz
C CE
Output Capacitance
C 15
obo
V = 0, 100 kHz 1.0 MHz
E
75
C
ibo
V = 0, 100 kHz 1.0 MHz
EB C
SWITCHING CHARACTERISTICS
Turn -
t
1.0 s
V
C B1
Turn -
t
10
s
V
C B1 B2
SAFE OPERATING AREA
DC Tests
0
T = +25
C
Test 1
V
CE C
Test 2
V
CE C
Test 3
V = 200 Vdc, I
CE C
Test 4
V
CE C
(3) Pulse Test: Pulse Width = 300 2.0%.
6 Lake Street, Lawrence, MA 01841 120101
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
Page 2 of 2
s, Duty Cycle
2N5416 = 10 mAdc = 300 Vdc, I
2N5415 = 24 mAdc
= 100 mAdc = 100 Vdc, I
= 1.0 Adc = 10 Vdc, I
C; 1 Cycle; t = 0.4 s
CC
= 5.0 mAdc = I = 50 mAdc, I = 200 Vdc, I
off
Off Time
CC
= 5.0 mAdc = 50 mAdc, I =200 Vdc, I
on
On Time
f = 5.0 Vdc, I
pF
Input Capacitance
CB
f = 10 Vdc, I
pF
= 5.0 mAdc, V
fe
= 10 mAdc, V
fe
Magnitude of Common Emitter Small
= 50 mAdc, V
dc
= 5.0 mAdc = 50 mAdc, I
Vdc
Collector
= 1.0 mAdc, V
= 50 mAdc, V
Forward