X-On Electronics has gained recognition as a prominent supplier of JANTXV2N6193 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTXV2N6193 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTXV2N6193 Microchip

JANTXV2N6193 electronic component of Microchip
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See Product Specifications
Part No.JANTXV2N6193
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
Datasheet: JANTXV2N6193 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.7309 ea
Line Total: USD 12.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 12.7309

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 118
Multiples : 1
118 : USD 15.6142
250 : USD 15.4682
500 : USD 15.3221
1000 : USD 15.1747
2000 : USD 15.0286
2500 : USD 14.8812
3000 : USD 14.7338
5000 : USD 14.6437

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 14.364
4 : USD 13.7894
20 : USD 13.7894
40 : USD 13.7894
125 : USD 13.7894

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 13.4565

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 15.6754

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANTXV2N6193 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTXV2N6193 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA PNP MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/561 Devices Qualified Level JAN, JANTX 2N6193 JANTXV MAXIMUM RATINGS Ratings Symbol 2N6193 Units - Emitter Voltage 100 V CEO - 100 V C Emitter - 6.0 V EBO 5.0 I C Base Current 1.0 I B 0 Total Power Dissipation T = +25 C 1.0 W A P 0 T T = +25 C 10 W C 0 Operating & Storage Temperature Range - 65 to +200 C T T o p , TO - 39* THERMAL CHARACTERISTICS (TO - Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction - - Case 17.5 R 0 0 1) Derate linearly 5.71mW/ > +25 A 0 0 2) Derate linearly 57.1mW/ > +25 C 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - Emitter Sustaining Voltage V 100 I C - Emitter Cuto ff Current I 100 CEO V = 100 Vdc CE Emitter - I 100 EBO V = 6.0 Vdc EB - Emitter Cutoff Current 10 I CEX V = 90 Vdc, V = 1.5 Vdc CE BE - I 10 c V = 100 Vdc 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page CB CBO Ad Base Cutoff Current Collector Adc Collector Adc Base Cutoff Current Adc Collector = 50 mAdc CEO(sus) Vdc Collector package outline *See appendix A for C C for T C C for T JC C/W to 205AD) stg (2) (1) Adc Adc Collector Current Vdc Base Voltage BO Vdc Base Voltage Collector Vdc Collector 2N6193 JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS DC Current Gain 60 I = 2.0 Vdc C CE h FE 60 240 I = 2.0 Vdc C CE 40 I = 2.0 Vdc C CE - Emitter Saturation Voltage 0.7 I V C B CE(sat) 1.2 I B Base - Emitter Saturation Voltage 1.2 I V C B BE(sat) 1.8 I B DYNAMIC CHARACTERISTICS - Signal Short Circuit - Current Transfe r Ratio 3.0 15 h I = 10 Vdc, f = 10 MHz C CE Output Capacitance C 300 obo V = 0, 100 kHz 1.0 MHz E Output Capacitance 1250 C ibo V = 0, 100 kHz 1.0 MHz BE C SWITCHING CHARACTERISTICS t 100 s V = - = 3.0 d CC t Rise Time 100 I = r s C B1 t 2.0 s V = - s CC C t Fall Time 200 I = - I = f s B1 B2 SAFE OPERATING AREA DC Tests 0 T = +25 C, 1 Cycle, t 0.5 s C Test 1 V CE C Test 2 V CE C (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 12010 1 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle = 55 mAdc = 90 Vdc, I = 5.0 Adc = 2.0 Vdc, I 0.2 Adc = 2.0 Adc, 40 Vdc I Storage Time 0.2 Adc = 2.0 Adc, I BE(off) Vdc 40 Vdc, V lay Time De f = 2.0 Vdc, I pF CB f = 10 Vdc, I pF = 0.5 Adc, V fe Forward Magnitude of Common Emitter Small C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I C = 0.5 Adc = 5.0 Adc, I Vdc = 0.2 Adc = 2.0 Adc, I Collector = 5.0 Adc, V = 2.0 Adc, V = 0.5 Adc, V

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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