VRF152G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF152G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband perfor- mance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES 5:1 Load VSWR Capability at Specified Operating Conditions Improved Ruggedness V = 130V (BR)DSS Nitride Passivated 300W with 16dB Typical Gain 175MHz, 50V Excellent Stability & Low IMD Refractory Gold Metallization Common Source Configuration High Efficiancy Replacement for MRF151G RoHS Compliant Maximum Ratings All Ratings: T =25C unless otherwise specified C Symbol Parameter VRF152G Unit V Drain-Source Voltage 130 V DSS I Continuous Drain Current T = 25C 40 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 500 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 130 (BR)DSS GS D V R Drain-Source On-State Resistance (I = 10A, V = 10V) .13 .20 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 50V, V = 0V) 50 A DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 1.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 10A) 5.0 6.2 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance 0.35 C/W R JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF152G Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 383 ISS GS C Output Capacitance V = 50V 215 pF oss DS C Reverse Transfer Capacitance f = 1MHz 18 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 175MHz,- V = 50V, I = 500mA, P = 300W 14 16 dB PS DD DQ out f = 175MHz, V = 50V, I = 500mA, P = 300W 50 55 % D DD DQ out f = 175MHz, V = 50V, I = 500mA, P = 300W 5:1VSWR - All Phase Angles No Degradation in Output Power DD DQ out 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 40 45 250s PULSE 15V TEST<0.5 % DUTY 13V CYCLE 40 35 10V 9V 35 T = -55C 30 J 30 8V 25 T = 25C J 25 20 7V T = 125C J 20 15 15 6V 10 10 V = 5V GS 5 5 0 0 0 4 8 12 16 0 2 4 6 8 10 12 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 1000 100 C iss I DMax C oss 100 10 R ds(on) PD Max T = 125C J C rss T = 75C C 10 1 0 20 40 60 80 100 120 1 10 100 250 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4958 Rev B 4-2016 C, CAPACITANCE (F) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (A) D D