MMBD4448HTW-TP Micro Commercial Components (MCC)

MMBD4448HAQW/ADW/CDW/SDW/CQW/TW Features Fast Switching Speed Ultra-Small Surface Mount Package High Conductance, Power Dissipation 200mW For General Purpose Switching Applications Switching Diodes Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: 150C Storage Temperature Range: -65C to +150C SOT-363 Thermal Resistance:625C/W Junction to Ambient Repetitive RMS G DC Blocking Peak Reverse Reverse MCC Device Voltage Voltage Voltage Part Number Marking C B V R V V RRM R(RMS) MMBD4448HAQW KA5 80V 57V 80V A M MMBD4448HADW KA6 80V 57V 80V H MMBD4448HCDW KA7 80V 57V 80V K L J MMBD4448HSDW KAB 80V 57V 80V D MMBD4448HCQW KA4 80V 57V 80V DIMENSIONS MMBD4448HTW KAA 80V 57V 80V INCHES MM DIM NOTE MIN MAX MIN MAX Non-Repetitive Peak A 0.006 0.014 0.15 0.35 V 100V RM Reverse Voltage B 0.045 0.053 1.15 1.35 C 0.079 0.096 2.00 2.45 0.026 0.65 Nominal Working Peak D V 80V RWM G 0.047 0.055 1.20 1.40 Reverse Voltage H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 Forward Continuous I 500mA FM K 0.031 0.043 0.80 1.10 Current L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Average Rectified I 250mA o Output Current Suggested Solder Pad Layout Non-Repetitive Peak 4.0A t=1.0us I Forward Surge FSM 1.5A t=1.0s Current Power Dissipation P 200mW D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Rev.3-3-12012020 1/4 MCCSEMI.COMMMBD4448HAQW/ADW/CDW/SDW/CQW/TW Electrical Characteristics 25C Unless Otherwise Specified I =100A Minimum Breakdown Voltage V 80V R BR I =5.0mA F 0.720V I =10.0mA 0.855V F Maximum Forward Voltage V F 1.000V I =50.0mA F 1.250V I =150.0mA F I =5.0mA Minimum Forward Voltage V 0.620V F F O 25nA VR=20V, T =25 C J O 100nA VR=70V, T =25 C J Maximum Peak Reverse voltage I R O 30A VR=25V, T =150 C J O 50A VR=75V, T =150 C J V =6.0V,f=1.0MHz Maximum Total Capacitance C 3.5pF R T Maximum Reverse Recovery Time t 4.0ns I =5mA, V =6V rr F R Internal Structure AC C C C A C A 1 2 3 C A C A C C C A 2 2 1 2 1 2 2 1 2 2 A C AAA 1 1 222 AC A A A C C NC C C A 1 1 2 3 NC 4 3 C C A A A 2 1 A A 1 2 1 1 2 3 1 4 Marking: KA4 Marking: KA5 Marking: KAA Marking: KA6 Marking: KA7 Marking: KAB MMBD4448HCQW MMBD4448HAQW MMBD4448HADW MMBD4448HTW MMBD4448HCDW MMBD4448HSDW Rev.3-3-12012020 2/4 MCCSEMI.COM