MMBT4401 Features Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 357 /W Junction to Ambient Parameter Symbol Rating Unit SOT-23 V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO A V D Emitter-Base Voltage 6 V EBO I Continuous Collector Current 600 mA C 3 B C P Power Dissipation 350 mW 1 2 D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, F E <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. G H J L K DIMENSIONS INCHES MM DIM NOTE Marking: 2X MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Internal Structure C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 3 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 1 J 0.003 0.007 0.08 0.18 1.BASE K 0.012 0.020 0.30 0.51 2.EMITTER L 0.007 0.020 0.20 0.50 3.COLLECTOR 2 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-4-12012020 1/4 MCCSEMI.COMMMBT4401 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =10mA, I =0 Collector-Base Breakdown Voltage 60 V (BR)CBO C E (2) V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Base Cutoff Current I 0.1 A V =35V, V =0.4V BL CE BE Collector Cutoff Current I 0.1 A V =35V, V =0.4V CEX CE BE h 20 V =1V, I =0.1mA FE(1) CE C h 40 V =1V, I =1mA FE(2) CE C (2) DC Current Gain h 80 V =1V, I =10mA FE(3) CE C h 100 300 V =1V, I =150mA FE(4) CE C h 40 V =1V, I =500mA FE(5) CE C 0.4 V I =150mA, I =15mA C B Collector-Emitter Saturation Voltage V CE(sat) 0.75 V I =500mA, I =50mA C B 0.75 0.95 V I =150mA, I =15mA C B V Base-Emitter Saturation Voltage BE(sat) I =500mA, I =50mA 1.2 V C B f V =10V, I =20mA, f=100MHz Transition Frequency 250 MHz T CE C t Delay Time 15 ns d V =30V, V =0.2V, I =150mA, CC BE C I =15mA t Rise Time 20 ns B1 r t Storage Time 225 ns s V =30V, I =150mA, I =I =15mA CC C B1 B2 t Fall Time 30 ns f C V =5V, I =0,f=1MHz Collector-Base Capacitance 6.5 pF cb CB E C V =0.5V, I =0, f=1MHz Emitter-Base Capacitance 30 pF eb EB C Note: 2. Pulse test: Pulse Width300s,Duty Cycle 2.0%. Rev.3-4-12012020 2/4 MCCSEMI.COM