X-On Electronics has gained recognition as a prominent supplier of EDB4432BBBJ-1D-F-D DRAM across the USA, India, Europe, Australia, and various other global locations. EDB4432BBBJ-1D-F-D DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

EDB4432BBBJ-1D-F-D Micron

EDB4432BBBJ-1D-F-D electronic component of Micron
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Part No.EDB4432BBBJ-1D-F-D
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip Mobile LPDDR2 SDRAM 4G-Bit 128Mx32 1.2V 134-Pin WFBGA Tray
Datasheet: EDB4432BBBJ-1D-F-D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1520: USD 7.6829 ea
Line Total: USD 11678.01 
Availability - 0
MOQ: 1520  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1520
Multiples : 1
1520 : USD 7.6829

   
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RoHS - XON
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We are delighted to provide the EDB4432BBBJ-1D-F-D from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EDB4432BBBJ-1D-F-D and other electronic components in the DRAM category and beyond.

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Embedded LPDDR2 SDRAM Features Embedded LPDDR2 SDRAM EDB4416BBBH, EDB4432BBBJ Options Marking Features Density/Page Size Ultra-low-voltage core and I/O power supplies 4Gb / 1-CS - single die 44 Frequency range Organization 53310 MHz (data rate range: 106620 Mb/s/pin) x16 16 4n prefetch DDR architecture x32 32 8 internal banks for concurrent operation V /V /V : 1.8V/1.2V/1.2V B DD1 DD2 DDQ Multiplexed, double data rate, command/address Revision B inputs commands entered on each CK t/CK c FBGA green package edge 10mm x 11.5mm x 0.75mm, 134- BH Bidirectional/differential data strobe per byte of ball x16 data (DQS t/DQS c) 10mm x 11.5mm x 0.75mm, 134- BJ Programmable READ and WRITE latencies (RL/WL) ball x32 Burst length: 4, 8, and 16 Timing cycle time Per-bank refresh for concurrent operation 1.875ns RL = 8 -1D Auto temperature-compensated self refresh Operating temperature range (ATCSR) by built-in temperature sensor From 30C to +85C Blank Partial-array self refresh (PASR) From 40C to +85C IT Selectable output drive strength (DS) Clock-stop capability Lead-free (RoHS-compliant) and halogen-free packaging Table 1: Key Timing Parameters Speed Clock Rate Data Rate Grade (MHz) (Mb/s/pin) RL WL 1D 533 1066 8 4 Table 2: S4 Configuration Addressing Architecture 256 Meg x 16 128 Meg x 32 Die configuration 32 Meg x 16 x 8 banks 16 Meg x 32 x 8 banks Row addressing 16K A 13:0 16K A 13:0 Column addressing 2K A 10:0 1K A 9:0 X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Embedded LPDDR2 SDRAM Features Figure 1: LPDDR2 Part Numbering E D B 44 32 B B BH -1D IT -F Embedded Memory Environment Code F = Lead-free (RoHS-compliant) and halogen-free Type D = Packaged device Operating Temperature IT = 40C to +85C Product Family Blank = 30C to +85C B = DDR2 Mobile RAM Density Speed (package only) 1D = 1066 Mbps 44 = 4Gb/1-CS Organization Package BH = 134-ball WFBGA (10mm x 11.5mm) 16 = x16 32 = x32 BJ = 134-ball WFBGA (10mm x 11.5mm) Power Supply and Interface Revision = V = 1.2V B = V = 1.8V V DDQ DD1 DD2 S4B device HSUL FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Die per Solder Ball Code Ball Count Ranks Channels Size (mm) Package Composition BH 134 1 1 (x16) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 BJ 134 1 1 (x32) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 Notes: 1. SDP = single-die package 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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