X-On Electronics has gained recognition as a prominent supplier of M58BW016FB7T3F NOR Flash across the USA, India, Europe, Australia, and various other global locations. M58BW016FB7T3F NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

M58BW016FB7T3F Micron

M58BW016FB7T3F electronic component of Micron
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Part No.M58BW016FB7T3F
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Parallel/Serial 3V/3.3V 16M-bit 512K x 32 70ns Automotive 80-Pin PQFP T/R
Datasheet: M58BW016FB7T3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 5.6473 ea
Line Total: USD 2823.65 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 500
Multiples : 1
500 : USD 5.6473

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Organisation
Data Bus Width
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
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We are delighted to provide the M58BW016FB7T3F from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M58BW016FB7T3F and other electronic components in the NOR Flash category and beyond.

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M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage V = 2.7 V to 3.6 V for program, erase DD and read V = V = 2.4 V to 3.6 V for I/O DDQ DDQIN buffers V = 12 V for fast program (optional) PP High performance Access times: 70, 80 ns PQFP80 (T) 56 MHz effective zero wait-state burst read Synchronous burst read Asynchronous page read Hardware block protection LBGA WP pin for write protect of the 2 outermost parameter blocks and all main blocks RP pin for write protect of all blocks Optimized for FDI drivers LBGA80 10 12 mm Fast program / erase suspend latency time < 6 s Common Flash interface Memory blocks RoHS packages available 8 parameters blocks (top or bottom) 31 main blocks Low power consumption 5 A typical deep power-down 60 A typical standby for M58BW016DT/B 150 A typical standby for M58BW016FT/B Automatic standby after asynchronous read Electronic signature Manufacturer code: 20h Top device code: 8836h Bottom device code: 8835h 100 K write/erase cycling + 20 years data retention (minimum) High reliability level with over 1 M write/erase cycling sustained July 2011 Rev 18 1/70 www.numonyx.com 1Contents M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB Contents 1 Description . 7 1.1 Block protection .11 2 Signal descriptions . 14 2.1 Address inputs (A0-A18) . 14 2.2 Data inputs/outputs (DQ0-DQ31) . 14 2.3 Chip Enable (E) 14 2.4 Output Enable (G) 14 2.5 Output Disable (GD) . 15 2.6 Write Enable (W) . 15 2.7 Reset/Power-down (RP) 15 2.8 Latch Enable (L) 15 2.9 Burst Clock (K) . 16 2.10 Burst Address Advance (B) . 16 2.11 Valid Data Ready (R) 16 2.12 Write Protect (WP) 16 2.13 Supply voltage (V DD) 16 2.14 Output supply voltage (V ) . 17 DDQ 2.15 Input supply voltage (V ) . 17 DDQIN ) 17 2.16 Program/erase supply voltage (V PP 2.17 Ground (V and V ) 17 SS SSQ 2.18 Dont use (DU) . 17 2.19 Not connected (NC) . 17 3 Bus operations 18 3.1 Asynchronous bus operations . 18 3.1.1 Asynchronous bus read . 18 3.1.2 Asynchronous latch controlled bus read 18 3.1.3 Asynchronous page read 19 3.1.4 Asynchronous bus write . 19 3.1.5 Asynchronous latch controlled bus write 19 3.1.6 Output Disable 19 2/70

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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