X-On Electronics has gained recognition as a prominent supplier of MT49H32M18BM-33:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT49H32M18BM-33:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT49H32M18BM-33:B Micron

MT49H32M18BM-33:B electronic component of Micron
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Part No.MT49H32M18BM-33:B
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip RLDRAM 576M-Bit 32Mx18 1.8V 144-Pin M-BGA Tray
Datasheet: MT49H32M18BM-33:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1120: USD 21.7055 ea
Line Total: USD 24310.16 
Availability - 0
MOQ: 1120  Multiples: 1120
Pack Size: 1120
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1120
Multiples : 1120
1120 : USD 21.7055

   
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We are delighted to provide the MT49H32M18BM-33:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT49H32M18BM-33:B and other electronic components in the DRAM category and beyond.

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576Mb: x9 x18 x36 CIO RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 64 Meg x 9 x 8 Banks MT49H32M18 32 Meg x 18 x 8 Banks MT49H16M36 16 Meg x 36 x 8 Banks 1 Options Marking Features Clock cycle timing 533 MHz DDR operation (1.067 Gb/s/pin data rate) t 1.875ns RC = 15ns -18 t 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock 2.5ns RC = 15ns -25E t frequency) 2.5ns RC = 20ns -25 t Organization 3.3ns RC = 20ns -33 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O Configuration 8 banks 64 Meg x 9 64M9 32 Meg x 18 32M18 Reduced cycle time (15ns at 533 MHz) 16 Meg x 36 16M36 Nonmultiplexed addresses (address multiplexing Operating temperature option available) Commercial (0 to +95C) None SRAM-type interface Industrial (T = 40C to +95C IT C Programmable READ latency (RL), row cycle time, T = 40C to +85C) A and burst sequence length Package Balanced READ and WRITE latencies in order to op- 144-ball BGA FM timize data bus utilization 144-ball BGA (Pb-free) BM Data mask for WRITE commands 144-ball FBGA TR 144-ball FBGA (Pb-free) SJ Differential input clocks (CK, CK ) Revision :A/:B Differential input data clocks (DKx, DKx ) 1. Not all options listed can be combined to On-die DLL generates CK edge-aligned data and Note: define an offered product. Use the part cat- output data clock signals alog search on www.micron.com for availa- Data valid signal (QVLD) ble offerings. 32ms refresh (16K refresh for each bank 128K re- fresh command must be issued in total each 32ms) HSTL I/O (1.5V or 1.8V nominal) matched impedance outputs 2.5V V , 1.8V V , 1.5V or 1.8V V I/O EXT DD DDQ On-die termination (ODT) R TT PDF: 09005aef80fe62fb Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 576Mb RLDRAM 2 CIO D1.pdf - Rev. M 09/15 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.576Mb: x9 x18 x36 CIO RLDRAM 2 Features BGA Marking Decoder Due to space limitations, BGA-packaged components have an abbreviated part marking that is different from the part number. Microns BGA Part Marking Decoder is available on Microns web site at micron.com. Figure 1: Part Numbers Example Part Number: MT49H16M36SJ-25 :B -: MT49H Configuration I/O Package Speed Temp. Rev. Configuration I/O Revision 64 Meg x 9 64M9 Common None :A Rev. A 32M18 32 Meg x 18 Separate C :B Rev. B 16 Meg x 36 16M36 Temperature Package Commercial None FM 144-ball BGA IT Industrial BM 144-ball BGA (Pb-free) Speed Grade TR 144-ball FBGA t -18 CK = 1.875ns SJ 144-ball FBGA (Pb-free) t -25E CK = 2.5ns t -25 CK = 2.5ns t -33 CK = 3.3ns PDF: 09005aef80fe62fb Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 576Mb RLDRAM 2 CIO D1.pdf - Rev. M 09/15 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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