X-On Electronics has gained recognition as a prominent supplier of MT49H8M36SJ-25:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT49H8M36SJ-25:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT49H8M36SJ-25:B Micron

MT49H8M36SJ-25:B electronic component of Micron
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See Product Specifications
Part No.MT49H8M36SJ-25:B
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip RLDRAM2 288M-Bit 8Mx36 1.8V 144-Pin F-BGA
Datasheet: MT49H8M36SJ-25:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1120: USD 27.0527 ea
Line Total: USD 30299.02 
Availability - 0
MOQ: 1120  Multiples: 1120
Pack Size: 1120
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1120
Multiples : 1120
1120 : USD 27.0527
2240 : USD 26.6717
4480 : USD 25.9096
6720 : USD 25.3381
8960 : USD 24.3855
11200 : USD 24.0045
112000 : USD 23.6235

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1120
Multiples : 1120
1120 : USD 21.626

   
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We are delighted to provide the MT49H8M36SJ-25:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT49H8M36SJ-25:B and other electronic components in the DRAM category and beyond.

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288Mb: x9, x18, x36 CIO RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 32 Meg x 9 x 8 Banks MT49H16M18 16 Meg x 18 x 8 Banks MT49H8M36 8 Meg x 36 x 8 Banks 1 Options Marking Features Clock cycle timing 533 MHz DDR operation (1.067 Gb/s/pin data rate) t 1.875ns RC = 15ns -18 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock t 2.5ns RC = 15ns -25E frequency) t 2.5ns RC = 20ns -25 Organization t 3.3ns RC = 20ns -33 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 t 5.0ns RC = 20ns -5 8 internal banks for concurrent operation and maxi- Configuration mum bandwidth 32 Meg x 9 32M9 Reduced cycle time (15ns at 533 MHz) 16 Meg x 18 16M18 Nonmultiplexed addresses (address multiplexing 8 Meg x 36 8M36 option available) Operating temperature SRAM-type interface Commercial (0 to +95C) None Programmable READ latency (RL), row cycle time, Industrial (T = 40C to +95C IT C and burst sequence length T = 40C to +85C) A Balanced READ and WRITE latencies in order to Package optimize data bus utilization 144-ball BGA FM Data mask for WRITE commands 144-ball BGA (Pb-free) BM Differential input clocks (CK, CK ) 144-ball FBGA TR Differential input data clocks (DKx, DKx ) 144-ball FBGA (Pb-free) SJ On-die DLL generates CK edge-aligned data and Revision :B output data clock signals Data valid signal (QVLD) 1. Not all options listed can be combined to Note: 32ms refresh (8K refresh for each bank 64K refresh define an offered product. Use the part cat- command must be issued in total each 32ms) alog search on micron.com for available of- HSTL I/O (1.5V or 1.8V nominal) ferings. 2560 matched impedance outputs 2.5V V , 1.8V V , 1.5V or 1.8V V I/O EXT DD DDQ On-die termination (ODT) R TT PDF: 09005aef80a41b46 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 rldram-2 cio 288mb.pdf - Rev. Q 10/15 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.288Mb: x9, x18, x36 CIO RLDRAM 2 Features BGA Marking Decoder Due to space limitations, BGA-packaged components have an abbreviated part marking that is different from the part number. Microns BGA Part Marking Decoder is available on Microns web site at micron.com. Figure 1: 288Mb RLDRAM 2 CIO Part Numbers Example Part Number: MT49H16M18SJ-25 :B - : MT49H Configuration I/O Package Speed Temp Rev. Revision I/O Rev. A None Common None Configuration Rev. B :B Separate C 32 Meg x 9 32M9 16 Meg x 18 16M18 Temperature 8M36 8 Meg x 36 None Commercial IT Industrial Package 144-ball BGA FM Speed Grade -18 t 144-ball BGA (Pb-free) BM CK = 1.875ns t 144-ball FBGA TR -25E CK = 2.5ns t 144-ball FBGA (Pb-free) SJ -25 CK = 2.5ns t -33 CK = 3.3ns t -5 CK = 5ns PDF: 09005aef80a41b46 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 rldram-2 cio 288mb.pdf - Rev. Q 10/15 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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