NVTFS6H854N
Power MOSFET
80 V, 14.5 m, 48 A, Single NChannel
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R to Minimize Conduction Losses
DS(on)
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Low Capacitance to Minimize Driver Losses
NVTFS6H854NWF Wettable Flanks Product
AECQ101 Qualified and PPAP Capable
V R MAX I MAX
These Devices are PbFree and are RoHS Compliant
(BR)DSS DS(on) D
80 V 48 A
14.5 m @ 10 V
MAXIMUM RATINGS (T = 25C unless otherwise noted)
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Parameter Symbol Value Unit
DraintoSource Voltage V 80 V NChannel
DSS
GatetoSource Voltage V 20 V D (5 8)
GS
Continuous Drain T = 25C I 44 A
C D
Current R
JC
T = 100C 31
(Notes 1, 2, 3, 4) C
Steady
State
G (4)
Power Dissipation T = 25C P 68 W
C D
R (Notes 1, 2, 3)
JC
T = 100C 34
C
S (1, 2, 3)
Continuous Drain T = 25C I 9.5 A
A D
Current R
JA
T = 100C 6.7
(Notes 1, 3, 4) A
Steady
MARKING DIAGRAM
State
Power Dissipation T = 25C P 3.2 W
A D
1
R (Notes 1, 3)
JA
T = 100C 1.6 1
A
S D
XXXX
WDFN8 S D
Pulsed Drain Current T = 25C, t = 10 s I 175 A
A p DM
AYWW
(8FL) S D
Operating Junction and Storage Temperature T , T 55 to C
CASE 511AB G D
J stg
+175
Source Current (Body Diode) I 57 A
S
XXXX = Specific Device Code
Single Pulse DraintoSource Avalanche E 205 mJ
A = Assembly Location
AS
Energy (I = 2.2 A)
L(pk) Y = Year
WW = Work Week
Lead Temperature for Soldering Purposes T 260 C
L
= PbFree Package
(1/8 from case for 10 s)
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
See detailed ordering, marking and shipping information in the
Parameter Symbol Value Unit
package dimensions section on page 5 of this data sheet.
JunctiontoCase Steady State (Note 3) R 2.2 C/W
JC
JunctiontoAmbient Steady State (Note 3) R 47
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi () is used as required per JESD51 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
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3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
Semiconductor Components Industries, LLC, 2018 1 Publication Order Number:
June, 2018 Rev. 0
NVTFS6H854N/DNVTFS6H854N
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
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Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V
(BR)DSS GS D
Zero Gate Voltage Drain Current I
T = 25C 10 A
DSS J
V = 0 V,
GS
V = 80 V
DS
T = 125C 250
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GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V V = V , I = 45 A 2.0 4.0 V
GS(TH) GS DS D
DraintoSource On Resistance R V = 10 V, I = 10 A 11.9 14.5 m
DS(on) GS D
Forward Transconductance g V = 15 V, I = 15 A 39.5 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 770 pF
iss
V = 0 V, f = 1.0 MHz,
GS
Output Capacitance C 113
oss
V = 40 V
DS
Reverse Transfer Capacitance C 5.4
rss
Threshold Gate Charge Q 2.7 nC
G(TH)
GatetoSource Charge Q 4.3
GS V = 10 V, V = 40 V, I = 15 A
GS DS D
GatetoDrain Charge Q 2.3
GD
Total Gate Charge Q V = 10 V, V = 40 V, I = 15 A 13 nC
G(TOT) GS DS D
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time t 11 ns
d(on)
Rise Time t 22
r
V = 6.0 V, V = 64 V,
GS DS
I = 15 A
D
TurnOff Delay Time t 24
d(off)
Fall Time t 6.0
f
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V T = 25C 0.8 1.2 V
SD
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V = 0 V,
GS
I = 10 A
S
T = 125C 0.7
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Reverse Recovery Time t 33 ns
RR
Charge Time t 22
a
V = 0 V, dl /dt = 100 A/s,
GS S
I = 15 A
S
Discharge Time t 11
b
Reverse Recovery Charge Q 29 nC
RR
5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
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