X-On Electronics has gained recognition as a prominent supplier of BCM857BS,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCM857BS,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCM857BS,115 Nexperia

BCM857BS,115 electronic component of Nexperia
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Part No.BCM857BS,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS MATCHED PAIR
Datasheet: BCM857BS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 10046
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0902
6000 : USD 0.0902
9000 : USD 0.0902
15000 : USD 0.0902
30000 : USD 0.0902

547
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2051
50 : USD 0.1647
150 : USD 0.1474
500 : USD 0.1258
3000 : USD 0.1162
6000 : USD 0.1106

10046
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.2035
100 : USD 0.1188
1000 : USD 0.1045
3000 : USD 0.0825
9000 : USD 0.0825
24000 : USD 0.0803
45000 : USD 0.0781

2488
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.35
10 : USD 0.28
25 : USD 0.1988
100 : USD 0.182
108 : USD 0.1582

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Package Case
Brand
Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCM857BS,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCM857BS,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCM857BV BCM857BS BCM857DS PNP/PNP matched double transistors Rev. 06 28 August 2009 Product data sheet 1. Product prole 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package NPN/NPN Matched version of complement Nexperia JEITA BCM857BV SOT666 - BCM847BV BC857BV BCM857BS SOT363 SC-88 BCM847BS BC857BS BCM857DS SOT457 SC-74 BCM847DS - 1.2 Features n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors 1.3 Applications n Current mirror n Differential amplier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - -45 V CEO I collector current - - -100 mA C h DC current gain V = -5V 200 290 450 FE CE I = -2mA CBCM857BV/BS/DS Nexperia PNP/PNP matched double transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Per device 1 h /h h matching V = -5V 0.9 1 - FE1 FE2 FE CE I = -2mA C 2 V -V V matching V = 5V- --2 mV BE1 BE2 BE CE I =2m- A C 1 The smaller of the two values is taken as the numerator. 2 The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 5 base TR2 1 2 3 1 2 3 6 collector TR1 001aab555 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCM857BV - plastic surface-mounted package 6 leads SOT666 BCM857BS SC-88 plastic surface-mounted package 6 leads SOT363 BCM857DS SC-74 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 5. Marking codes 1 Type number Marking code BCM857BV 3B BCM857BS A9* BCM857DS R8 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCM857BV BS DS Nexperia B.V. 2009. All rights reserved. Product data sheet Rev. 06 28 August 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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