X-On Electronics has gained recognition as a prominent supplier of PBSS4032ND,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4032ND,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4032ND,115 Nexperia

PBSS4032ND,115 electronic component of Nexperia
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Part No.PBSS4032ND,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BISS Transistor Hi-Speed Switch
Datasheet: PBSS4032ND,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
41: USD 0.1856 ea
Line Total: USD 7.61 
Availability - 2764
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 41  Multiples: 1
Pack Size: 1
Availability Price Quantity
2764
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 41
Multiples : 1
41 : USD 0.1856

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the PBSS4032ND,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4032ND,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4032ND 30 V, 3.5 A NPN low V (BISS) transistor CEsat Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 3.5 A C I peak collector current single pulse -- 6 A CM t 1ms p 1 R collector-emitter I =4A -50 75 m CEsat C saturation resistance I =400 mA B 1 Pulse test: t 300 s 0.02. pPBSS4032ND NXP Semiconductors 30 V, 3.5 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 collector 6 5 4 1, 2, 5, 6 2 collector 3base 3 4emitter 132 4 5 collector sym014 6 collector 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032ND SC-74 plastic surface-mounted package 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBSS4032ND ZF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 3.5 A C I peak collector current single pulse -6 A CM t 1ms p I base current - 0.5 A B PBSS4032ND 1 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 30 January 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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