PBSS4032NT Nexperia

PBSS4032NT 30 V, 2.6 A NPN low V (BISS) transistor CEsat Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) CEsat small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT. 1.2 Features Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 30 V CEO I collector current - - 2.6 A C I peak collector current single pulse -- 5 A CM t 1ms p 1 R collector-emitter I =2.5 A -76 105 m CEsat C saturation resistance I =0.25A B 1 Pulse test: t 300 s 0.02. pPBSS4032NT NXP Semiconductors 30 V, 2.6 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032NT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS4032NT *BM 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 2.6 A C I peak collector current single pulse -5 A CM t 1ms p I base current - 0.5 A B PBSS4032NT 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 18 December 2009 2 of 14