PBSS8110X Nexperia

PBSS8110X 100 V, 1 A NPN low V (BISS) transistor CEsat Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ CEsat TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage V CEsat High collector current capability: I and I C CM High efficiency leading to less heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC converter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 100 V CEO I collector current (DC) - - 1 A C I peak collector current single pulse --3 A CM t 1ms p 1 R collector-emitter I =1A - 165 200 m CEsat C saturation resistance I =100 mA B 1 Pulse test: t 300 s 0.02. pNXP Semiconductors PBSS8110X 100 V, 1 A NPN low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1emitter 2 2 collector 3 3base 1 321 sym042 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS8110X SC-62 plastic surface mounted package collector pad for SOT89 good heat transfer 3 leads 4. Marking Table 4. Marking codes 1 Type number Marking code PBSS8110X *4B 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS8110X 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 11 December 2009 2 of 15