PMBT5551 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheet NPN high-voltage transistor PMBT5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose Telephony. DESCRIPTION handbook, halfpage 3 3 NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. 1 MARKING 2 1 2 (1) TYPE NUMBER MARKING CODE Top view MAM255 PMBT5551 *G1 Note 1. * = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBT5551 plastic surface mounted package 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 180 V CBO V collector-emitter voltage open base 160 V CEO V emitter-base voltage open collector 6 V EBO I collector current (DC) 300 mA C I peak collector current 600 mA CM I peak base current 100 mA BM P total power dissipation T 25 C 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb 2004 Jan 21 2