PMCM4401VPEZ Nexperia

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4.9 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3 A T = 25 C - 55 65 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMCM4401VPE 12 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 D drain G B2 S source B S Transparent top view 017aaa259 WLCSP4 (OL- PMCM4401VPE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM4401VPE WLCSP4 WLCSP4: wafer level chip-size package 4 bumps OL-PMCM4401VPE (2 x 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM4401VPE Q 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B Top view, balls down aaa-012880 Fig. 1. WLCSP4 marking code description PMCM4401VPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 July 2015 2 / 15