PSMN7R0-100BS,118 Nexperia

PSMN7R0-100BS N-channel 100V 6.8 m standard level MOSFET in D2PAK. Rev. 2 2 March 2012 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 - - 269 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A T = 100 C see Figure 12 --12 m DSon GS D j resistance V =10V I =15A T =25C see Figure 13 -5.4 6.8 m GS D j Dynamic characteristics Q gate-drain charge V =10V I =25A V =50V -36 -nC GD GS D DS see Figure 15 see Figure 14 total gate charge V =10V I =25A V =50V - 125 - nC Q G(tot) GS D DS see Figure 14 see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A - - 315 mJ DS(AL)S GS j(init) D drain-source V = 100 V unclamped R =50 sup GS avalanche energy 1 Continuous current is limited by package.PSMN7R0-100BS Nexperia N-channel 100V 6.8 m standard level MOSFET in D2PAK. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -85 A D GS mb 1 V =10V T =25 C see Figure 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C see Figure 3 - 475 A DM p mb P total power dissipation T =25 C see Figure 2 - 269 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C - 100 A S mb I peak source current pulsed t 10 s T = 25 C - 475 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =100A - 315 mJ DS(AL)S GS j(init) D avalanche energy V = 100 V unclamped R =50 sup GS 1 Continuous current is limited by package. PSMN7R0-100BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Objective data sheet Rev. 2 2 March 2012 2 of 14