X-On Electronics has gained recognition as a prominent supplier of NJG1152KA1-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1152KA1-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1152KA1-TE1 Nisshinbo

NJG1152KA1-TE1 electronic component of Nisshinbo
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Part No.NJG1152KA1-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier Wide Band LN Amp GaAs MMIC 20mA
Datasheet: NJG1152KA1-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5554 ea
Line Total: USD 2.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5554
10 : USD 0.9322
100 : USD 0.6862
250 : USD 0.6372
500 : USD 0.5426
1000 : USD 0.4339
2500 : USD 0.3937
4000 : USD 0.3697
8000 : USD 0.3567

   
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We are delighted to provide the NJG1152KA1-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1152KA1-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1152KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1152KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range, the NJG1152KA1 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1152KA1 helps improve receiver sensitivity through high gain and low noise figure. NJG1152KA1 Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. An small and ultra-thin package of FLP6-A1 is adopted. APPLICATIONS Terrestrial application like Digital TV, Set-top box FEATURES Operating frequency 40 to 900MHz Package size FLP6-A1 (Package size: 1.6x1.6x0.55mm typ.) LNA mode, 50 : Operating voltage 3.3V Operating current 20mA typ. Small signal gain 18.0dB typ. Noise figure 1.2dB typ. f=40 to 150MHz 0.9dB typ. f=150 to 900MHz Bypass mode, 50 : Operating voltage 0V Insertion loss 1.0dB typ. 2nd order intermodulation distortion 75dB typ. 3rd order intermodulation distortion 85dB typ. PIN CONFIGURATION (Top View) Pin connection 1. RFOUT1 4 3 2. GND RFIN RFOUT2 3. RFOUT2 5 2 4. RFIN Bias Circuit GND GND 5. GND 6. VCTL Logic 6 1 Circuit VCTL RFOUT1 1pin Index TRUTH TABLE H =V L =V CTL(H) CTL(L) V LNA Bypass Mode select CTL H ON OFF LNA mode L OFF ON Bypass mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2018-03-14 - 1 - NJG1152KA1 ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50 a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage V 5.0 V DD Control voltage V 5.0 V CTL Input power P V =3.3V +10 dBm IN DD 4-layer FR4 PCB with through-hole Power dissipation P 580 mW D (74.2x74.2mm), T =150C j Operating temperature T -40 to +85 C opr Storage temperature T -55 to +150 C stg ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) V =3.3V, T =+25C, with application circuit DD a PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V 2.3 3.3 3.6 V DD Control voltage (High) V 1.3 1.8 3.6 V CTL(H) Control voltage (Low) V 0.0 0.0 0.5 V CTL(L) Operating current1 I 1 RF OFF, V =1.8V - 20 45 mA DD CTL Operating current2 I 2 RF OFF, V =0V - 17 35 A DD CTL Control current I RF OFF, V =1.8V - 6 20 A CTL CTL - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
NJR
NJR Corporation/NJRC
Ricoh
Ricoh Elec Devices
Ricoh Electronic Devices Company
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