X-On Electronics has gained recognition as a prominent supplier of NJG1302V-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1302V-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1302V-TE1 Nisshinbo

NJG1302V-TE1 electronic component of Nisshinbo
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Part No.NJG1302V-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier Medium Power
Datasheet: NJG1302V-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Gain
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Pd - Power Dissipation
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We are delighted to provide the NJG1302V-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1302V-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1302V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1302V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless LAN. This amplifier has wide variable gain capability of 20dB dynamic range. NJG1302V has input and output matching circuits internally and features low voltage and high efficiency operation. The NJG1302V output power of 21dBm is easily available with very low distortion. nFEATURES lVoltage gain under low distortion lLow voltage operation +3.0V typ. lLow current consumption 195mA typ. f=1.9GHz, P =21dBm OUT lHigh gain 32dB lLow distortion (ACP) -60dBc typ. f=1.9GHz, P =21dBm OUT lReduction of Parasitic oscillation lInput and output internal matching circuit lPackage SSOP14 (Package size: 5.0x6.4x1.25mm) nPIN CONFIGURATION V Type (Top View) 1 14 Pin connection 1. RFIN 13 2 2. GND 3. VGG1 4. GND 3 12 5. VCONT 6. GND 4 11 7. VGG2 8. RFOUT 9. GND 5 10 10. VDD2 11. GND 6 12. VDD1 9 13. GND 14. GND 7 8 - 1 -NJG1302V nABSOLUTE MAXIMUM RATINGS (T =+25C, Z =Z=50 ) a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V , V V , V =-0.9V 6 V DD1 DD2 GG1 GG2 Gate Voltage V , V V , V =3.0V -4 V GG1 GG2 DD1 DD2 Gain Control Voltage V V , V =3.0V -4 V CONT DD1 DD2 Input Power P V , V =3.0V, V , V =-0.9V 3 dBm IN DD1 DD2 GG1 GG2 Power Dissipation P At on PCB board 600 mW D Operating Temperature T -30~+85 C opr Storage Temperature T -40~+150 C stg nELECTRICAL CHARACTERISTICS (T =+25C, Z =Z=50 ) a s l PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq V =3.0V 1.89 - 1.92 GHz DD1, 2 Drain Voltage V 2.9 3.0 5.0 V DD1, 2 Gate Voltage V V =3.0V, I =180mA -1.25 -0.9 -0.6 V GG1, 2 DD1, 2 idle Idle Current *1 I V =3.0V, No RF Signal 175 180 185 mA idle DD1, 2 Operating Current *1 I V =3.0V, P =21dBm - 195 205 mA DD DD1, 2 OUT Gate Current *2 I V =3.0V, P =21dBm -150 -70 - uA GG DD1, 2 OUT Gain Control V =3.0V, P =21dBm DD1, 2 OUT I -5 -2 - uA CONT Terminal Current -2.0<V <0.0V CONT Gain Control Voltage V -2.0 - 0 V CONT Small Signal Gain Gain V =3.0V, I =180mA 29 32 35 dB DD1, 2 idle Gain Flatness G V =3.0V, I =180mA 0 0.5 1.0 dB flat DD1, 2 idle V =-2~0V, V =3.0V CONT DD1, 2 Gain Control Range G 18 20 23 dB CONT I =180mA idle Pout at 1dB P V =3.0V 22 23 - dBm -1dB DD1, 2 Compression point V =3.0V, P =21dBm DD1, 2 OUT Adjacent Channel P 1 offset=600kHz, - -60 -55 dBc acp Leakage Power 1 P /4 DQPSK IN V =3.0V, P =21dBm DD1, 2 OUT Adjacent Channel P 2 offset=900kHz, - -65 -60 dBc acp Leakage Power 2 P /4 DQPSK IN Harmonics P V =3.0V, P =21dBm - -35 -30 dBc SP DD1, 2 OUT Input VSWR VSWR V =3.0V - - 2.2 i DD1, 2 Parasitic Oscillation for V =3.0V, P =21dBm DD1, 2 OUT Fundamental Signal Level Load VSWR Tolerance - Load VSWR=4:1, All Phase : <-60dBc = *1: VDD1 Terminal VDD2 Terminal Total Current *2: VGG1 Terminal VGG2 Terminal Total Current - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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