X-On Electronics has gained recognition as a prominent supplier of NJG1307R-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1307R-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1307R-TE1 Nisshinbo

NJG1307R-TE1 electronic component of Nisshinbo
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Part No.NJG1307R-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier Driver Amp Variable Gain
Datasheet: NJG1307R-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
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Number Of Channels
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We are delighted to provide the NJG1307R-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1307R-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1307R DRIVER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION n PACKAGE OUTLINE NJG1307R driver This and NJG1307R NJG1307R operation. nFEATURES l +3.0V l = 8dBm l 33dB 30dB 25dB l 11dBm 10dBm l 40dB typ. lPackage nPIN CONFIGURATION R TYPE (TOP VIEW) Pin Connection 1. 1 8 out1 2. V 2 7 3. GND1 4. RF 3 6 5. RF out2 4 5 6. 7. GND1 8. RF 1 - - in2 GND2 in1 CONT RF VSP8 Wide Variable range typ. f= 1.9GHz 8dBm typ. f= 1441MHz typ. f= 938MHz point Pout at 1dB compression typ. f= 1.9GHz typ. f= 1441MHz typ. f= 938MHz Small signal gain OUT typ. P 25mA Low current consumption typ. Single and low voltage operation features stable VSWR and low current variable gain with 40dB dynamic range. is an amplifier which has high gain of 33dB amplifier of Cellular Phone. is a GaAs MMIC designed mainly forNJG1307R nABSOLUTE MAXIMUM RATINGS ( T C , Z =Z ) a s l PARAMETER Drain Voltage V 6 V DD V V 3 V DD Input Power P V =3V, V =2V 10 dBm in DD Operating Power P 3 2 0 D T - 4 0 ~ C T - 55 ~ 150 C stg nELECTRICAL CHARACTERISTICS 1 (T =25 C , Z =Z , V ) a s l PARAMETER freq 9 9 9 Drain Voltage V 2.7 3.0 5.0 V DD I V =2V, P - 25 3 5 DD CONT out V =2V, P 29 33 - dB CONT in V =2V, P CONT in Gain Flatness G - 0.5 - dB G V , P 35 40 - dB CONT in Pout at P V =2V - + 1 1 - dBm CONT Adjacent Channel P V P - -60 -55 dBc acp CONT Leakage Power in VSWR VSWR V =2V - 1.5 - in1 CONT VSWR VSWR V =2V - 1.5 - out1 o1 CONT VSWR - 1.5 - VSWR V =2V in2 CONT VSWR VSWR V =2V - 1.5 - out2 o2 CONT 2 - - Port RF i2 Port RF Port RF i1 Port RF /4 DQPSK offset=50kHz, P out =+8dBm =2V, Compression point -1dB Gain 1dB cont =-25dBm 2.0V 1~ =0. Gain Control Range f=915~960MHz flat =-25dBm =-25dBm Gain Small Signal Gain mA =+8dBm Operating Current MHz 60 38 15 Operating Frequency UNITS MAX TYP MIN CONDITIONS SYMBOL DD , f=938MHz =3.0V =50 (Application1 PDC800MHz) Storage Temperature opr 85 Operating Temperature mW At on PCB board CONT CONT =3V Gain Control Voltage UNITS RATINGS CONDITIONS SYMBOL =50 =+25

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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