X-On Electronics has gained recognition as a prominent supplier of 228A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 228A Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

228A NTE

228A electronic component of NTE
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Part No. 228A
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: T-NPN-SI HI VLTG
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 14.6705 ea
Line Total: USD 146.71 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 10
Multiples : 1
10 : USD 14.6705
20 : USD 11.4467
25 : USD 9.7585
100 : USD 3.2803

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 228A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 228A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE 228A is an NPN silicon transistor with an SOT-223 package. It has a maximum collector-base voltage of 60V, a maximum collector-emitter voltage of 25V and a maximum emitter-base voltage of 5V. It has a maximum current gain of 200 and a total power dissipation of 625mW. It has a minimum saturation voltage of 0.2V and a maximum of 0.3V. This transistor is typically used in switching and audio applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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