NTE85 Silicon NPN Transistor General Purpose Amplifier TO92 Type Package Applications: Medium Power Amplifiers Class B Audio Outputs HiFi Drivers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V ...................................................... 30V CEO Collector Base Voltage, V ....................................................... 50V CBO EmitterBase Voltage, V .......................................................... 5V EBO Continuous Collector Current, I .................................................. 500mA C Total Device Dissipation (T = +25C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 5.0mW/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toCase, R .................................... 83.3 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 200 C/W thJA Note 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Note 2. These ratings are based on a maximum junction temperature of 150 C. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Emitter Breakdown V I = 10mA, I = 0, Note 3 30 V (BR)CEO C B Voltage CollectorBase Breakdown Voltage V I = 100A, I = 0 50 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100A, I = 0 5.0 V (BR)EBO E C Collector Cutoff Current I V = 20V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 3V, I = 0 100 nA EBO BE C Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2% Rev. 1214Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 2V, I = 50mA, Note 3 100 300 FE CE C BaseEmitter ON Voltage V I = 100mA, V = 2V, 0.5 1.0 V BE(on) C CE Note 3 CollectorEmitter Saturation Voltage V I = 100mA, I = 5mA, 0.6 V CE(sat) C B Note 3 Current GainBandwidth Product f I = 50mA, V = 2V 100 MHz T C CE CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 12 pF cb CB E Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) .021 (.445) Dia Max Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max