MPSA44 NTE

MPSA44 Silicon NPN Transistor High Voltage Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 400V CEO Collector Base Voltage, V ...................................................... 500V CBO EmitterBase Voltage, V .......................................................... 6V EBO Continuous Collector Current, I .................................................. 300mA C Total Device Dissipation (T = 25 C), P .......................................... 625mW A D Derate Above 25 C ....................................................... 5mW/ C Total Device Dissipation (T = 25 C), P ............................................. 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 83.3 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 200 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1.0mA, I = 0, Note 1 400 V (BR)CEO C B V I = 100 A, V = 0 500 V (BR)CES C BE CollectorBase Breakdown Voltage V I = 100 A, I = 0 500 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 6.0 V (BR)EBO E C Collector Cutoff Current I V = 400V, I = 0 0.1 A CBO CB E I V = 400V, V = 0 500 nA CES CE BE ON Characteristics (Note 1) DC Current Gain h V = 10V, I = 1mA 40 FE CE C V = 10V, I = 10mA 50 200 CE C V = 10V, I = 50mA 45 CE C V = 10V, I = 100mA 40 CE C CollectorEmitter Saturation Voltage V I = 1mA, I = 0.1mA 0.4 V CE(sat) C B I = 10mA, I = 1.0mA 0.5 V C B I = 50mA, I = 5.0mA 0.75 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 0.75 V BE(sat) C B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Small Signal Characteristics Output Capacitance C V = 20V, I = 0, f = 1MHz 7 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 1MHz 130 pF ibo EB C SmallSignal Current Gain h I = 10mA, V = 10V, f = 20MHz 1.0 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max